NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME
First Claim
1. A non-volatile memory device comprising:
- a program voltage supply unit for applying a program voltage to a memory cell;
a program/erase count storage unit for storing a total program/erase operation count of the non-volatile memory device;
a program start voltage storage unit for storing levels of program start voltages to be differently supplied according to the program/erase operation count; and
a program voltage controller for controlling the program start voltage according to the program/erase operation count.
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Accused Products
Abstract
Program voltages of a non-volatile memory device are controlled variably according to a program/erase operation count. The non-volatile memory device includes a program voltage supply unit for applying a program voltage to a memory cell, a program/erase count storage unit for storing a total program/erase operation count of the non-volatile memory device, a program start voltage storage unit for storing levels of program start voltages to be differently supplied according to the program/erase operation count, and a program voltage controller for controlling the program start voltage according to the program/erase operation count.
12 Citations
9 Claims
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1. A non-volatile memory device comprising:
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a program voltage supply unit for applying a program voltage to a memory cell; a program/erase count storage unit for storing a total program/erase operation count of the non-volatile memory device; a program start voltage storage unit for storing levels of program start voltages to be differently supplied according to the program/erase operation count; and a program voltage controller for controlling the program start voltage according to the program/erase operation count. - View Dependent Claims (2, 3, 4)
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5. A method of operating a non-volatile memory device, the method comprising:
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repeatedly performing program/erase operations according to a specific program start voltage until a program/erase count corresponds to a first reset reference value; when the program/erase count corresponds to the first reset reference value, decreasing the specific program start voltage; and repeatedly performing program/erase operations according to the decreased program start voltage until the program/erase count corresponds to a second reset reference value that is greater than the first reset reference value. - View Dependent Claims (6, 7)
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8. A method of operating a non-volatile memory device, the method comprising:
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providing a plurality of reset reference values that are arranged in an ascending order; and when a program/erase operation count reaches a specific reset reference value while program/erase operations are performed repeatedly, decreasing a program start voltage and then executing the program/erase operations. - View Dependent Claims (9)
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Specification