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METHOD OF MAKING INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE PROGRAMMABLE MEMORY HAVING VARIABLE COUPLING

  • US 20090124054A1
  • Filed: 11/14/2008
  • Published: 05/14/2009
  • Est. Priority Date: 11/14/2007
  • Status: Active Grant
First Claim
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1. A method of forming a non-volatile programmable memory device situated on a substrate comprising:

  • forming a gate for non-volatile programmable memory device from a first layer;

    wherein said first layer is shared by the non-volatile programmable memory device and at least one other device also situated on the substrate and associated with a logic gate and/or a volatile memory;

    forming a drain region comprised of a first drain region and at least one separate second drain region; and

    varying an amount of capacitive coupling between said gate said drain region by selectively overlapping portions of said gate with both said first drain region and said at least one second drain.

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