PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS
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Abstract
Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.
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Citations
48 Claims
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1-19. -19. (canceled)
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20. A method for processing a substrate, the method comprising:
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generating a continuous particle beam containing a plurality of particles; and introducing the continuous particle beam to a region of the substrate in an amorphous phase and transforming the region from the amorphous phase to a crystalline phase, wherein the continuous particle beam has a current density of 5×
1014 particles/cm2 sec or greater. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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Specification