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METHOD OF FORMING NARROW FINS IN FINFET DEVICES WITH REDUCED SPACING THEREBETWEEN

  • US 20090124097A1
  • Filed: 11/09/2007
  • Published: 05/14/2009
  • Est. Priority Date: 11/09/2007
  • Status: Abandoned Application
First Claim
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1. A method of forming narrow fins in a semiconductor substrate, the method comprising:

  • forming a sacrificial mandrel layer over the semiconductor substrate;

    using a photolithographic process to pattern the sacrificial mandrel layer so as to perform a plurality of mandrel features having an initial width greater than or equal to F and spacing therebetween of greater than or equal to F, wherein F corresponds to a minimum feature size associated with the photolithographic process used;

    performing a thermal oxidation of sidewall surfaces of the mandrel features so as to form a plurality of oxide pillars, wherein the thermal oxidation consumes a portion of the sacrificial mandrel material, and wherein the plurality of oxide pillars have both a width and a spacing therebetween that are less than F;

    removing remaining portions of the sacrificial material; and

    transferring a pattern defined by the oxide pillars into the semiconductor substrate so as to form a plurality of semiconductor fins having both a width and a spacing therebetween that is less than F.

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