Electron Beam Irradiation Device

• US 20090127473A1
• Filed: 11/18/2005
• Published: 05/21/2009
• Est. Priority Date: 05/17/2005
• Status: Active Grant

• Current Assignee: Integral Geometry Science Inc.
• Original Assignee: Kyoto University
• Inventors: Kobayashi, Kei, Yamada, Hirofumi, Matsushige, Kazumi, Kimura, Kenjiro
• Granted Patent: US 7,829,863 B2
• Time in Patent Office: Days
• US Class Current: 250/396.R
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01J 2237/06333 Photo emission
• CPC Class Codes: H01J 2237/06358 Secondary emission
• CPC Class Codes: H01J 2237/31779 from patterned photocathode
• CPC Class Codes: H01J 2237/31794 affecting masks
• CPC Class Codes: H01J 37/073 Electron guns using field emission, photo emission, or secondary emission electron sources
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography
• CPC Class Codes: H01J 37/3175 Projection methods, i.e. transfer substantially complete pattern to substrate

Abstract

An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

Claims

1. An electron beam irradiation device, comprising:

a light pattern generating section for generating a two-dimensional light pattern;

an electron amplification section for (i) generating an electron beam array based on the light pattern entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array; and

an electron beam lens section for converging the amplified electron beam array on an electron ray resist.

2. The electron beam irradiation device as set forth in claim 1, wherein:

said electron beam lens section is capable of performing at least one of (i) acceleration of the amplified electron beam array, (ii) alignment of the amplified electron beam array, and (iii) projection of the amplified electron beam array.

3. The electron beam irradiation device as set forth in claim 1, wherein:

said electron amplification section includes multiple cylindrical microchannels which are arranged adjacent to one another in a direction perpendicularly crossing a direction of a light axis of the light pattern so that respective axes of the microchannels are parallel to the direction of the light axis.

4. The electron beam irradiation device as set forth in claim 1, wherein:

said electron amplification section includes a photoelectric film for (i) converting, into an electron, a photon entering from a light pattern entering side, and (ii) for emitting the electron.

5. The electron beam irradiation device as set forth in claim 1, wherein:

said light pattern generating section includes;

a femto-second laser; and

a micro-mirror array section for reflecting thereon a laser beam from the femto-second laser, thereby forming the two-dimensional light pattern.

6. The electron beam irradiation device as set forth in claim 1, further comprising:

a compensating section for compensating the light pattern so as to reduce distortion that occurs in a pattern formed by the said amplified electron beam array.

7. The electron beam irradiation device as set forth in claim 6, wherein:

said compensating section includes a section generating reversely-distorted light pattern which controls the light pattern generating section to generate a reverse-distortion light pattern so as to cancel distortion that occurs in the amplified electron beam array.

8. The electron beam irradiation device as set forth in claim 6, wherein:

said compensating section includes a section generating divided light pattern which controls the light pattern generating section to generate, from the light pattern, multiple divided light patterns which compensate one another.

9. The electron beam irradiation device as set forth in claim 1, further comprising:

a grid electrostatic lens section 16 provided on an emitting side of the electron amplification section, for restraining divergence in emission angle of the amplified electron beam array from the electron amplification section.

10. The electron beam irradiation device as set forth in claim 3, wherein:

each of said microchannels has such a shape that its inner peripheral surface of an end portion, on an emission side of the amplified electron beam array, is gradually spread outwardly towards an emission end of the microchannel, for a purpose of restraining divergence in emission angle of the amplified electron beam array from the electron amplification section.