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THIN FILM TRANSISTOR

  • US 20090127552A1
  • Filed: 01/27/2009
  • Published: 05/21/2009
  • Est. Priority Date: 10/12/2006
  • Status: Active Grant
First Claim
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1. A thin film transistor, comprising:

  • a substrate;

    a gate electrode, a source electrode, and a drain electrode;

    a dielectric layer; and

    a semiconductor layer;

    wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the dielectric layer or the substrate.

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