Semiconductor Structure and Method of Manufacturing a Semiconductor Structure
First Claim
1. A semiconductor structure (1) formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate (2,3), the structure comprising:
- a bottom cladding layer (4);
a top cladding layer (5) having a flat upper surface (9) grown above the bottom cladding layer, the lattice constant of the top cladding layer being the same as that of the bottom cladding layer; and
a diffusion region (6,7) positioned between the bottom cladding layer (4) and the top cladding layer (5) for diffusing light propagating within the semiconductor structure (1), the diffuse region having refractive index different from those of the cladding layers and non-flat surface for providing light diffusing interfaces between the diffusion region and the cladding layers,characterized in that the diffusion region comprises a plurality of diffusion layers (6,7), compositions and thicknesses of said diffusion layers having been chosen to avoid formation of strain-induced dislocations in the diffusion region, and adjacent diffusion layers (6,7) having different refractive indices in order to further enhance the diffusion efficiency.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor structure is formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate. The structure comprises a bottom cladding layer, a top cladding layer, and a diffusion region positioned between the cladding layers for diffusing light propagating within the semiconductor structure. The diffuse region has refractive index different from those of the cladding layers and non-flat surfaces for providing light diffusing interfaces between the diffusion region and the cladding layers. According to the invention, the diffusion region comprises a plurality of diffusion layers, compositions and thicknesses of said diffusion layers having been chosen to avoid formation of strain-induced dislocations in the diffusion region, and adjacent diffusion layers having different refractive indices in order to further enhance the diffusion efficiency.
14 Citations
14 Claims
-
1. A semiconductor structure (1) formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate (2,3), the structure comprising:
-
a bottom cladding layer (4); a top cladding layer (5) having a flat upper surface (9) grown above the bottom cladding layer, the lattice constant of the top cladding layer being the same as that of the bottom cladding layer; and a diffusion region (6,7) positioned between the bottom cladding layer (4) and the top cladding layer (5) for diffusing light propagating within the semiconductor structure (1), the diffuse region having refractive index different from those of the cladding layers and non-flat surface for providing light diffusing interfaces between the diffusion region and the cladding layers, characterized in that the diffusion region comprises a plurality of diffusion layers (6,7), compositions and thicknesses of said diffusion layers having been chosen to avoid formation of strain-induced dislocations in the diffusion region, and adjacent diffusion layers (6,7) having different refractive indices in order to further enhance the diffusion efficiency. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A method of manufacturing a semiconductor structure (1) formed of nitrides of group III metals having wurtzite crystal structure and grown in vapor phase on a (0001) oriented semiconductor substrate (2,3), the method comprising steps of
growing in vapor phase a bottom cladding layer (4); -
growing in vapor phase a diffusion region (6,7) above the bottom cladding layer for diffusing light propagating within the semiconductor structure (1), the diffusion region having a refractive index different from that of the bottom cladding layer and non-flat surfaces; and growing in vapor phase a top cladding layer (5) above the diffusion region, the top cladding layer having a flat upper surface (9), a refractive index different from that of the diffusion region, and a lattice constant the same as that of the bottom cladding layer, characterized in that the growing of the diffusion region comprises steps of growing a plurality of diffusion layers (6,7), compositions and thicknesses of the diffusion layers having been chosen to avoid formation of strain-induced dislocations in the layer interfaces, and adjacent diffusion layers (6,7) having different refractive indices in order to further enhance the diffusion efficiency. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
-
Specification