MOS device
First Claim
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1. A semiconductor device comprising:
- a drain;
an epitaxial layer overlaying the drain;
a body disposed in the epitaxial layer;
a source embedded in the body;
a gate trench extending into the epitaxial layer;
a gate disposed in the gate trench;
an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth; and
an active region contact electrode disposed within the active region contact trench.
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Abstract
A semiconductor device includes a drain, an epitaxial layer overlaying the drain, a body disposed in the epitaxial layer, a source embedded in the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth, and an active region contact electrode disposed within the active region contact trench.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a drain; an epitaxial layer overlaying the drain; a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth; and an active region contact electrode disposed within the active region contact trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of fabricating a semiconductor device, comprising:
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forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; disposing gate material in the gate trench; forming a body in the epitaxial layer; forming a source in the body; forming an active region contact trench that has a varying trench depth; and disposing a contact electrode within the active region contact trench. - View Dependent Claims (18, 19, 20)
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Specification