SEMICONDUCTOR DEVICE

• US 20090127641A1
• Filed: 01/22/2009
• Published: 05/21/2009
• Est. Priority Date: 01/30/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun
• Granted Patent: US 7,987,379 B2
• Time in Patent Office: Days
• US Class Current: 257/428
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

The invention provides a semiconductor device that power is stabilized by suppressing power consumption as much as possible. The semiconductor device of the invention includes a logic portion and a memory portion each including a plurality of transistors, a detecting portion for detecting one or both of operation frequencies of the logic portion and the memory portion, a Vth control for supplying a Vth control signal to one or both of the logic portion and the memory portion, and an antenna. Each of the plurality of transistors has a first gate electrode which is input with a logic signal, a second gate electrode which is input with the Vth control signal, and a semiconductor film such that the second gate electrode, the semiconductor film, and the first gate electrode are provided in this order from the bottom.

Claims

1. (canceled)

2. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:

an element group including a transistor;

an antenna electrically connected to the element group; and

a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material,

wherein the element group and the antenna are sealed between the first protective layer and the second protective layer, and

wherein a thickness of the element group is 5 μ

m or less.

3. The semiconductor device according to claim 2, further comprising a barrier film between the first protective layer and the element group and a barrier film between the second protective layer and the element group.

4. The semiconductor device according to claim 2, wherein when a total thickness of the first protective layer and the second protective layer is d, each of a thickness of the first protective layer and a thickness of the second protective layer is (d/2)±

30 μ

m.

5. The semiconductor device according to claim 2, wherein the first protective layer and the second protective layer are in contact with each other in a portion surrounding the element group.

6. The semiconductor device according to claim 2, wherein the antenna includes silver, copper, or a metal which is coated with silver or copper.

7. The semiconductor device according to claim 2, wherein the element group includes more than one of a control circuit, an arithmetic circuit, an input/output circuit, a power source circuit, a clock generating circuit, a data demodulation/modulation circuit, and an interface circuit.

8. The semiconductor device according to claim 2, wherein the transistor is a thin film transistor.

9. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:

an element group having a logic portion and a memory portion;

a detecting portion for detecting at least one of an operation frequency of the logic portion and an operation frequency of the memory portion;

a Vth control portion for supplying a Vth control signal to at least one of the logic portion and the memory portion depending on a detection result from the detecting portion;

an antenna electrically connected to the element group; and

a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material,

wherein the element group and the antenna are sealed between the first protective layer and the second protective layer,

wherein each of the logic portion and the memory portion includes a transistor, and

wherein a thickness of the element group is 5 μ

m or less.

10. The semiconductor device according to claim 9, wherein the detecting portion includes an address comparator, an address memory, a counter, a reset signal generating circuit, a discriminating circuit and a discriminating reference data memory.

11. The semiconductor device according to claim 9, further comprising a barrier film between the first protective layer and the element group and a barrier film between the second protective layer and the element group.

12. The semiconductor device according to claim 9, wherein when a total thickness of the first protective layer and the second protective layer is d, each of a thickness of the first protective layer and a thickness of the second protective layer is (d/2)±

30 μ

m.

13. The semiconductor device according to claim 9, wherein the first protective layer and the second protective layer are in contact with each other in a portion surrounding the element group.

14. The semiconductor device according to claim 9, wherein the antenna includes silver, copper, or a metal which is coated with silver or copper.

15. The semiconductor device according to claim 9, wherein the element group includes more than one of a control circuit, an arithmetic circuit, an input/output circuit, a power source circuit, a clock generating circuit, a data demodulation/modulation circuit, and an interface circuit.

16. The semiconductor device according to claim 9, wherein the transistor is a thin film transistor.

17. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:

an element group having a logic portion and a memory portion;

a detecting portion for detecting at least one of an operation frequency of the logic portion and an operation frequency of the memory portion;

a Vth control portion for supplying a Vth control signal to at least one of the logic portion and the memory portion depending on a detection result from the detecting portion;

an antenna electrically connected to the element group; and

a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material,

wherein the element group and the antenna are sealed between the first protective layer and the second protective layer,

wherein each of the logic portion and the memory portion includes a transistor,

wherein the logic portion includes a timing control, an instruction decoder, a register array, an address logic and buffer, a data bus interface, an Arithmetic Logic Unit, and an instruction register, and

wherein a thickness of the element group is 5 μ

m or less.

18. The semiconductor device according to claim 17, wherein the detecting portion is electrically connected to the Vth control portion and each of the timing control, the instruction decoder, the register array, the address logic and buffer, the data bus interface, the Arithmetic Logic Unit, and the instruction register.

19. The semiconductor device according to claim 17, wherein the Vth control portion is electrically connected to the detecting portion and each of the timing control, the instruction decoder, the register array, the address logic and buffer, the data bus interface, the Arithmetic Logic Unit, and the instruction register.

20. The semiconductor device according to claim 17, further comprising a barrier film between the first protective layer and the element group and a barrier film between the second protective layer and the element group.

21. The semiconductor device according to claim 17, wherein when a total thickness of the first protective layer and the second protective layer is d, each of a thickness of the first protective layer and a thickness of the second protective layer is (d/2)±

30 μ

m.

22. The semiconductor device according to claim 17, wherein the first protective layer and the second protective layer are in contact with each other in a portion surrounding the element group.

23. The semiconductor device according to claim 17, wherein the antenna includes silver, copper, or a metal which is coated with silver or copper.

24. The semiconductor device according to claim 17, wherein the element group includes more than one of a control circuit, an arithmetic circuit, an input/output circuit, a power source circuit, a clock generating circuit, a data demodulation/modulation circuit, and an interface circuit.

25. The semiconductor device according to claim 17, wherein the transistor is a thin film transistor.

26. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:

a circuit including a transistor, the transistor including a gate electrode, a gate insulating film and an active layer;

an antenna electrically connected to the circuit; and

a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material,

wherein the circuit and the antenna are sealed between the first protective layer and the second protective layer, and

wherein a thickness of the active layer is 20 to 200 μ

m.

27. The semiconductor device according to claim 26, further comprising a barrier film between the first protective layer and the circuit and a barrier film between the second protective layer and the circuit.

28. The semiconductor device according to claim 26, wherein when a total thickness of the first protective layer and the second protective layer is d, each of a thickness of the first protective layer and a thickness of the second protective layer is (d/2)±

30 μ

m.

29. The semiconductor device according to claim 26, wherein the first protective layer and the second protective layer are in contact with each other in a portion surrounding the circuit.

30. The semiconductor device according to claim 26, wherein the antenna includes silver, copper, or a metal which is coated with silver or copper.

31. The semiconductor device according to claim 26, wherein the transistor is a thin film transistor.

32. A semiconductor device capable of performing data communication in a noncontact manner, the semiconductor device comprising:

a circuit having a logic portion and a memory portion;

a detecting portion for detecting at least one of an operation frequency of the logic portion and an operation frequency of the memory portion;

a Vth control portion for supplying a Vth control signal to at least one of the logic portion and the memory portion depending on a detection result from the detecting portion;

an antenna electrically connected to the circuit; and

a first protective layer and a second protective layer wherein each of the first protective layer and the second protective layer includes an organic resin material,

wherein the circuit and the antenna are sealed between the first protective layer and the second protective layer,

wherein each of the logic portion and the memory portion includes a transistor, the transistor including a gate electrode, a gate insulating film and an active layer, and

wherein a thickness of the active layer is 20 to 200 nm.

33. The semiconductor device according to claim 32, farther comprising a barrier film between the first protective layer and the circuit and a barrier film between the second protective layer and the circuit.

34. The semiconductor device according to claim 32, wherein when a total thickness of the first protective layer and the second protective layer is d, each of a thickness of the first protective layer and a thickness of the second protective layer is (d/2)±

30 μ

m.

35. The semiconductor device according to claim 32, wherein the first protective layer and the second protective layer are in contact with each other in a portion surrounding the circuit.

36. The semiconductor device according to claim 32, wherein the antenna includes silver, copper, or a metal which is coated with silver or copper.

37. The semiconductor device according to claim 32, wherein the transistor is a thin film transistor.