MULTILAYER DIELECTRIC SUBSTRATE AND SEMICONDUCTOR PACKAGE
First Claim
1. A multilayer dielectric substrate that includes a cavity on a dielectric substrate, and a semiconductor device in the cavity, the cavity being an electromagnetically shielded space, the multilayer dielectric substrate comprising:
- a grounding conductor that is a part of the electromagnetic shield, and covers substantially the entire dielectric substrate in the cavity;
an opening that is located at a part of the grounding conductor;
an impedance transformer that is located in the dielectric substrate, electrically connected to the cavity through the opening, and has a length an odd number times as long as about ¼
of an in-substrate effective wavelength of a signal wave;
a dielectric transmission line with an end short that is located in the dielectric substrate;
a coupling opening that is located on an internal grounding conductor in a connecting section of the impedance transformer and the dielectric transmission line; and
a resistor that is located at a position in the dielectric transmission line distant from the end short by a length an odd number times as long as about ¼
of the in-substrate effective wavelength of the signal wave.
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Accused Products
Abstract
A multilayer dielectric substrate that mounts a semiconductor device in a cavity formed on a substrate. The multilayer dielectric substrate includes an opening formed in a surface-layer grounding conductor on the substrate in the cavity, and an impedance transformer, with a length of about ¼ of an in-substrate effective wavelength of a signal wave, electrically connected through the opening to the cavity. The multilayer dielectric substrate further includes a short-circuited end dielectric transmission line with a length of about ¼ of the in-substrate effective wavelength of the signal wave, a coupling opening formed on an inner-layer grounding conductor in a connecting section of the impedance transformer and the dielectric transmission line, and a resistor formed in the coupling opening.
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Citations
19 Claims
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1. A multilayer dielectric substrate that includes a cavity on a dielectric substrate, and a semiconductor device in the cavity, the cavity being an electromagnetically shielded space, the multilayer dielectric substrate comprising:
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a grounding conductor that is a part of the electromagnetic shield, and covers substantially the entire dielectric substrate in the cavity; an opening that is located at a part of the grounding conductor; an impedance transformer that is located in the dielectric substrate, electrically connected to the cavity through the opening, and has a length an odd number times as long as about ¼
of an in-substrate effective wavelength of a signal wave;a dielectric transmission line with an end short that is located in the dielectric substrate; a coupling opening that is located on an internal grounding conductor in a connecting section of the impedance transformer and the dielectric transmission line; and a resistor that is located at a position in the dielectric transmission line distant from the end short by a length an odd number times as long as about ¼
of the in-substrate effective wavelength of the signal wave. - View Dependent Claims (4, 9, 10, 13, 14, 17)
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2. A multilayer dielectric substrate that includes a cavity on a dielectric substrate, and a semiconductor device in the cavity, the cavity being an electromagnetically shielded space, the multilayer dielectric substrate comprising:
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a grounding conductor that is a part of the electromagnetic shield, and covers substantially the entire dielectric substrate in the cavity; an opening that is located at a part of the grounding conductor; a dielectric transmission line with an end short that is located in the dielectric substrate, electrically connected to the cavity through the opening, and has a length an odd number times as long as about ¼
of an in-substrate effective wavelength of a signal wave; anda resistor that is located on the opening. - View Dependent Claims (5, 7, 11, 15, 18)
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3. A multilayer dielectric substrate that includes a cavity on a dielectric substrate, and a semiconductor device in the cavity, the cavity being an electromagnetically shielded space, the multilayer dielectric substrate comprising:
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a grounding conductor that is a part of the electromagnetic shield, and covers substantially the entire dielectric substrate in the cavity; an opening that is located at a part of the grounding conductor; a dielectric transmission line with an end short that is located in the dielectric substrate, and electrically connected to the cavity through the opening; and a resistor that is located at a position in the dielectric transmission line distant from the short-circuited end by a length an odd number times as long as about ¼
of anin-substrate effective wavelength of a signal wave. - View Dependent Claims (6, 8, 12, 16, 19)
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Specification