Apparatus For Attenuating Reflections Of Electromagnetic Waves, Method For Its Manufacture And Its Use

• US 20090128445A1
• Filed: 03/31/2006
• Published: 05/21/2009
• Est. Priority Date: 05/14/2005
• Status: Active Grant

• Current Assignee: Forschungszentrum Karlsruhe Gmbh
• Original Assignee: Forschungszentrum Karlsruhe Gmbh
• Inventors: Seemann, Klaus, Zils, Stefan, Bekker, Viacheslav, Leiste, Harald
• Granted Patent: US 7,834,818 B2
• Time in Patent Office: Days
• US Class Current: 343/909
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A device for attenuating reflections of an electromagnetic wave impinging thereon and a method of making the device. The device includes a structured film comprised of at least one of a ferromagnetic and ferrimagnetic material. The structured film has a structure and a uniform film portion of the at least one of a ferromagnetic and ferrimagnetic material underneath the structure such that the structured film has at least two different resonance frequencies.

Claims

1-12. -12. (canceled)

13. A device for attenuating reflections of an electromagnetic wave impinging thereon comprising:

a structured film comprising at least one of a ferromagnetic and ferrimagnetic, material, the structured film including a structure and a uniform film portion of the at least;

one of a ferromagnetic and ferrimagnetic material underneath the structure such that the structured film has at least two different resonance frequencies.

14. The device as recited in claim 13 wherein the film is disposed on a substrate.

15. The device as recited in claim 13 wherein the structure is periodic and includes a spacing period between 10 μ

m and 250 μ

m.

16. The device as recited in claim 15 wherein the structure is periodic and includes a spacing period between 20 μ

m and 50 μ

m.

17. The device as recited in claim 15 wherein the structure comprises mutually adjacent objects having substantially same dimensions.

18. The device as recited in claim 13 wherein the film has a thickness between 50 nm and 2 μ

m.

19. The device as recited in claim 18 wherein the film has a thickness between 200 nm and 1 μ

m.

20. The device as recited in claim 13 wherein the device is operable to attenuate reflections of an electromagnetic wave having a frequency between 1 MHz and 10 GHz.

21. The device as recited in claim 20 wherein the device is operable to attenuate reflections of an electromagnetic wave having a frequency between 250 MHz and 5 GHz.

22. A method of manufacturing a device for attenuating reflections of an electromagnetic wave impinging thereon comprising:

applying a film of at least one of a ferromagnetic and ferrimagnetic material to a substrate; and

removing portions of the film so as to provide a structured film including a structure and a uniform film portion of the at least one of a ferromagnetic and ferrimagnetic material underneath the structure such that the structured film has at least two resonance frequencies.

23. The method as recited in claim 22 wherein the substrate is part of a housing of an electronic component.

24. The method as recited in claim 22 wherein structure is a periodic structure with a spacing period between 10 μ

m and 250 μ

m.

25. The method as recited in claim 22 wherein the structure is a periodic structure with a spacing period between 20 μ

m and 50 μ

m.

26. The method as recited in claim 22 wherein the film includes a thickness between 50 nm and 2 μ

m.

27. The method as recited in claim 22 wherein the film includes a thickness between 200 nm and 1 μ

m.

31. The method as recited in claim 27 wherein the film includes a thickness between 50 nm and 2 μ

m.

32. The method as recited in claim 27 wherein the film includes a thickness between 200 nm and 1 μ

m.

28. A method of shielding electronic components comprising:

applying a film of at least one of a ferromagnetic and ferrimagnetic material to a housing of the electronic components; and

removing portions of the film so as to provide a structured film including a structure and a uniform film portion of the at least one of a ferromagnetic and ferrimagnetic material underneath the structure, such that the structured film has at least two resonance frequencies and is operable to attenuate reflections of an electromagnetic wave impinging thereon.

29. The method as recited in claim 28 wherein the substrate is part of a housing of an electronic component.

30. The method as recited in claim 28 wherein the removing portions of the film create a periodic structure:

with a spacing period between 10 μ

m and 250 μ

m.