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MULTI-PORT THIN-FILM MEMORY DEVICES

  • US 20090129174A1
  • Filed: 07/14/2008
  • Published: 05/21/2009
  • Est. Priority Date: 11/19/2007
  • Status: Active Grant
First Claim
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1. A semiconductor storage device, comprising:

  • a metal line coupled to a gate of an access transistor, wherein the gate material is deposited substantially above the metal line.

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