Method of Forming Thin Film and Method of Manufacturing Semiconductor Device

• US 20090130331A1
• Filed: 08/10/2006
• Published: 05/21/2009
• Est. Priority Date: 08/16/2005
• Status: Abandoned Application

• Current Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Tsuneda, Masayuki, Sasaki, Shinya, Asai, Masayuki
• Application Number:
  US11/920,720
• Publication Number:
  US 20090130331A1
• Time in Patent Office: Days
• US Class Current: 427/535
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76856 by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
• CPC Class Codes: H01L 21/76862 Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation

Abstract

A thin film is deposited on a substrate to be processed by continuously performing: forming an amorphous thin film composed of Ti, N, C, and H as principal components; oxidizing a surface of the thin film; removing C and H, which are impurities in the thin film, by a plasma treatment, and increasing the density of the thin film; and removing a TiO thin film from a surface of the thin film.

Claims

1. A method of manufacturing a thin film for depositing a TiN film on a substrate to be processed by continuously performing:

forming an amorphous thin film composed of Ti, N, C, and H as principal components;

oxidizing a surface of said thin film;

removing C and H, which are impurities in said thin film, by a plasma treatment, and increasing the density of said thin film; and

removing a TiO thin film from a surface of said thin film.

2. The method of manufacturing a thin film according to claim 1, wherein a Ti-containing first gas and a second gas containing a reforming gas are alternately and repeatedly fed a prescribed number of times to the substrate to be processed in said forming the amorphous thin film.

3. The method of manufacturing a thin film according to claim 2, wherein the second gas is a Si-containing gas.

4. The method of manufacturing a thin film according to claim 3, wherein the Si-containing gas is SiH₄.

5. The method of manufacturing a thin film according to claim 1, wherein the mean electrical resistivity of the thin film formed in said forming the amorphous thin film is 0.01 to 1000 Ω

·

cm.

6. The method of manufacturing a thin film according to claim 1, wherein the TiN film deposited on the substrate to be processed is an amorphous TiN film.

7. The method of manufacturing a thin film according to claim 1, wherein a surface of said thin film is naturally oxidized in the atmosphere in said oxidizing.

8. The method of manufacturing a thin film according to claim 1, wherein an H-containing gas excited by plasma is fed to the oxidized surface in said removing C and H, which are impurities in said thin film, and in said increasing the density of said thin-film.

9. The method of manufacturing a thin film according to claim 8, wherein nitriding a surface of said thin film is provided subsequent to said increasing the density.

10. The method of manufacturing a thin film according to claim 1, wherein said TiO thin film is removed using an acid-based aqueous solution in said removing the TiO thin film.

11. A method of manufacturing a semiconductor device, for depositing a TiN film on a substrate to be processed by continuously performing:

forming an amorphous thin film composed of Ti, N, C, and H as principal components;

oxidizing a surface of said thin film;

removing C and H, which are impurities in said thin film, by a plasma treatment, and increasing the density of said thin film; and

removing a TiO thin film from a surface of said thin film.