PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW

• US 20090130335A1
• Filed: 09/01/2006
• Published: 05/21/2009
• Est. Priority Date: 09/01/2005
• Status: Abandoned Application

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Ito, Hiroyuki, Okumura, Tomohiro, Okashita, Katsumi, Mizuno, Bunji, Sasaki, Yuichiro, Nakayama, Ichiro, Nagai, Hisao, Okita, Shogo
• Application Number:
  US12/065,586
• Publication Number:
  US 20090130335A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma

Abstract

A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased.

Claims

1. A plasma processing apparatus having a vacuum container, a sample electrode which is disposed inside the vacuum container and is to be mounted with a sample, a gas supply apparatus for supplying a gas to inside the vacuum container, plural gas flow-out holes formed in a dielectric window which is opposed to the sample electrode, an exhaust apparatus for exhausting the vacuum container, a pressure control device for controlling pressure in the vacuum container, and an electromagnetic coupling device for generating an electromagnetic field inside the vacuum container,

wherein the dielectric window is composed of plural dielectric plates, grooves are formed in at least one of two confronting surfaces of the dielectric plates, gas passages are formed by the grooves and a flat surface of a dielectric plate opposed to the grooves, and gas supply portions for supplying the grooves with gases coming from the gas supply apparatus are provided;

and

the gas flow-out holes which are formed in a dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window.

2. The plasma processing apparatus according to claim 1, wherein the grooves form plural passage systems that do not communicate with each other.

3. The plasma processing apparatus according to claim 2, wherein each of the passage systems is composed of plural passages that do not allow the grooves to communicate with each other.

4. The plasma processing apparatus according to claim 2, wherein the passage systems are formed so that conductances of gas passages of the grooves from the gas supply portions to the gas flow-out holes can be controlled independently of each other.

5. The plasma processing apparatus according to claim 4, wherein gases that are flowed out of the passage systems have an approximately uniform distribution on a surface of the sample.

6. The plasma processing apparatus according to claim 2, wherein the gas flow-out holes communicate with first and second passage systems which are arranged so as to assume concentric circles, and the first passage system has the gas supply portion inside the gas flow-out holes on the concentric circle and the second passage system has the gas supply portion outside the gas flow-out holes on the concentric circle.

7. The plasma processing apparatus according to claim 1, wherein conductances of gas passages of the grooves from the gas supply portions to the gas flow-out holes are set identical.

8. The plasma processing apparatus according to claim 1, wherein the grooves are formed in only one of first and second dielectric plates, the other dielectric plate has a flat surface, and the passages are formed by bonding the first and second dielectric plates together.

9. The plasma processing apparatus according to claim 6, wherein the first passage system has plural radial groove portions which extend radially from a center of the dielectric plate and a first circular groove portion which assumes a circular arc and communicates with the radial groove portions, and gas flow-out holes are formed so as to communicate with the first circular groove portion;

and

the gas supply portion communicates with the radial groove portions at the center of the dielectric plate.

10. The plasma processing apparatus according to claim 9, wherein the second passage system has a second circular arc groove portion which assumes a circular arc and is formed outside the first circular arc groove portion and an outer groove which extends outward from the second circular arc groove portion, and that the gas supply portion communicates with the outer groove.

11. The plasma processing apparatus according to claim 1 which is a plasma doping apparatus comprising a heat processing section for forming a desired plasma distribution on a surface of a substrate to be processed and introducing the plasma into a surface layer of the substrate to be processed.

12. The plasma processing apparatus according to claim 1, wherein gas supply apparatus are connected to the respective grooves independently of each other.

13. The plasma processing apparatus according to claim 1, wherein the gas supply apparatus comprises a control valve for varying a conductance ratio between gas passages that allow the gas supply apparatus to communicate the respective grooves.

14. The plasma processing apparatus according to claim 1, wherein when each of the grooves is divided into a portion (a) where through-holes that connect the groove to the gas flow-out holes are arranged approximately at regular intervals and a portion (b) where no through-holes for connecting the groove to the gas flow-out holes are arranged, the connecting portion of the groove and the gas supply apparatus communicates with the portion (a) via plural paths as the portion (b) which have approximately the same lengths.

15. The plasma processing apparatus according to claim 7, wherein connecting portions of the portions (a) and (b) are arranged so as to be balanced almost completely with respect to the portion (a).

16. The plasma processing apparatus according to claim 1, wherein the dielectric window is composed of two dielectric plates;

and when the two dielectric plates are referred to as dielectric plates A and B in ascending order of distance from the sample electrode, a first groove is formed in a surface of the dielectric plate A that is located on the opposite side to the sample electrode and a second groove is formed is a surface of the dielectric plate B that is opposed to the sample electrode.

17. The plasma processing apparatus according to claim 16, wherein the first groove communicates with part of the gas flow-out holes via through-holes formed in the dielectric plate A and the second groove communicates with the other gas flow-out holes via through-holes formed in the dielectric plate A.

18. The plasma processing apparatus according to claim 1, wherein the dielectric window is composed of two dielectric plates;

and when the two dielectric plates are referred to as dielectric plates A and B in ascending order of distance from the sample electrode, first and second grooves are formed in a surface of the dielectric plate A that is located on the opposite side to the sample electrode or opposed to the sample electrode.

19. The plasma processing apparatus according to claim 18, wherein the first and second grooves communicate with the gas flow-out holes via through-holes formed in the dielectric plate A.

20. The plasma processing apparatus according to claim 1, wherein the dielectric window is composed of three dielectric plates;

and when the three dielectric plates are referred to as dielectric plates A, B, and C in ascending order of distance from the sample electrode, a first groove is formed in a surface of the dielectric plate A that is located on the opposite side to the sample electrode, a second groove is formed in a surface of the dielectric plate B that is opposed to the sample electrode, a third groove is formed in a surface of the dielectric plate B that is located on the opposite side to the sample electrode, and a fourth groove is formed in a surface of the dielectric plate C that is opposed to the sample electrode.

21. The plasma processing apparatus according to claim 20, wherein the first and second grooves communicate with parts of the gas flow-out holes via through-holes formed in the dielectric plate A and the third and fourth grooves communicate with the other parts of gas flow-out holes via through-holes formed in the dielectric plates A and B.

22. The plasma processing apparatus according to claim 20, wherein the dielectric window is composed of three dielectric plates;

and when the three dielectric plates are referred to as dielectric plates A, B, and C in ascending order of distance from the sample electrode, first and second grooves are formed in a surface of the dielectric plate A that is located on the opposite side to the sample electrode or a surface of the dielectric plate B that is opposed to the sample electrode and third and fourth grooves are formed in a surface of the dielectric plate B that is located on the opposite side to the sample electrode or a surface of the dielectric plate C that is opposed to the sample electrode.

23. The plasma processing apparatus according to claim 22, wherein the first and second grooves communicate with parts of the gas flow-out holes via through-holes formed in the dielectric plate A and the third and fourth grooves communicate with the other parts of gas flow-out holes via through-holes formed in the dielectric plates A and B.

24. The plasma processing apparatus according to claim 6, wherein:

the first passage system has plural first radial groove portions which extend radially from a center of the dielectric plate and second radial groove portions which extend radially from an outer end of each of the first radial groove portions so as to communicate with the first radial groove portions, and gas flow-out holes are formed so as to communicate with tips of the second radial groove portions; and

the gas supply portion communicates with the first radial groove portions at the center of the dielectric plate.

25. A plasma processing method for processing a substrate to be processed by generating gas plasma containing impurity ions by operating an electromagnetic coupling means opposed to a sample electrode which is disposed inside a vacuum container and mounted with the substrate to be processed while supplying a gas containing an impurity to inside the vacuum container at a prescribed rate and a prescribed concentration and controlling pressure in the vacuum container to a prescribed value, comprising the steps of:

giving a distribution to a concentration or a supply rate of a gas containing the impurity that is supplied to a surface of the substrate to be processed.

26. The plasma processing method according to claim 25, wherein an inside area and an outside area of the substrate to be processed is given different distributions of the concentration or the supply rate of the gas supplied.

27. The plasma processing method according to claim 25, wherein the gas concentration distribution is such that the concentration has a peak in a region having a prescribed distance from a center of the substrate to be processed.

28. The plasma processing method according to claim 25, further comprising the step of forming an impurity region having a depth of 20 nm or less as measured from the surface of the substrate to be processed using the gas plasma.

29. A dielectric window formed by laminating at least two dielectric plates, wherein grooves are formed in at least one surface of at least two dielectric plates, and gas flow-out holes which are formed in a surface of a dielectric plate that is one surface of the dielectric window communicate with the grooves inside the dielectric window.

30. The dielectric window according to claim 29, wherein the dielectric plates are made of quartz glass.

31. A manufacturing method of a dielectric window, comprising the steps of:

forming through-holes in a dielectric plate (A);

forming grooves in a dielectric plate (B); and

placing in a vacuum and heating the dielectric plate (A) in which the through-holes are formed and the dielectric plate (B) in which the grooves are formed while bringing at least one surfaces of the dielectric plates (A) and (B) in contact with each other, and thereby joining the contacting surfaces together.

32. A manufacturing method of a dielectric window, comprising the steps of:

forming through-holes and grooves in a dielectric plate (A); and

placing in a vacuum and heating the dielectric plate (A) in which the through-holes and the grooves are formed and another dielectric plate (B) while bringing at least one surfaces of the dielectric plates (A) and (B) in contact with each other, and thereby joining the contacting surfaces together.