Thin film field effect transistor and electroluminescence display using the same

• US 20090134389A1
• Filed: 11/18/2008
• Published: 05/28/2009
• Est. Priority Date: 11/26/2007
• Status: Abandoned Application

• Current Assignee: UDC Ireland Limited
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Matsunaga, Atsushi
• Application Number:
  US12/292,364
• Publication Number:
  US 20090134389A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A thin film field effect transistor that has on a substrate, at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein the active layer includes an amorphous oxide, a carrier concentration of the amorphous oxide decreases together with lowering of a temperature thereof from room temperature, and the amorphous oxide has an activation energy of from 0.04 eV to 0.10 eV is provided. A thin film field effect transistor having high mobility and a high ON-OFF ratio, and a high-gradation electroluminescence display using the same are provided.

Claims

1. A thin film field effect transistor comprising, on a substrate, at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein the active layer comprises an amorphous oxide, a carrier concentration of the amorphous oxide decreases together with lowering of a temperature thereof from room temperature, and the amorphous oxide has an activation energy of from 0.04 eV to 0.10 eV.

2. The thin film field effect transistor according to claim 1, wherein the amorphous oxide is a complex oxide comprising In and Zn.

3. The thin film field effect transistor according to claim 2, wherein a ratio of In/Zn of the number of In atoms contained in the amorphous oxide to the number of Zn atoms contained in the amorphous oxide, is from 0.1 to 4.0.

4. The thin film field effect transistor according to claim 2, wherein the amorphous oxide further comprises Ga.

5. The thin film field effect transistor according to claim 4, wherein the amorphous oxide comprises a complex oxide of In, Zn and Ga.

6. The thin film field effect transistor according to claim 1, wherein the carrier concentration of the amorphous oxide at room temperature is 6×

10¹³ cm<sup>−

3</sup> or more and less than 6×

10¹⁵ cm<sup>−

3</sup>.

7. The thin film field effect transistor according to claim 1, wherein the active layer comprises at least a first region comprising the amorphous oxide having an activation energy of from 0.04 eV to 0.10 eV, and a second region comprising a second amorphous oxide having an activation energy of less than 0.04 eV, wherein the second region is in contact with the gate insulating layer, and the first region is disposed so as to be electrically connected between the second layer and at least one of the source electrode or the drain electrode.

8. The thin film field effect transistor according to claim 7, wherein the second amorphous oxide comprises a complex oxide of In, Zn and Ga.

9. The thin film field effect transistor according to claim 7, wherein a carrier concentration of the second amorphous oxide at room temperature is 6×

10¹⁵ cm<sup>−

3</sup> or more and less than 1×

10¹⁰ cm<sup>−

3</sup>.

10. The thin film field effect transistor according to claim 1, wherein the substrate is a flexible substrate.

11. An electroluminescence display comprising a light-emitting element comprising, between a pair of electrodes, a thin film layer comprising at least a light-emitting layer, and a thin film field effect transistor for driving the light-emitting element, wherein the thin film field effect transistor is the thin film field effect transistor according to claim 1.