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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE

  • US 20090134397A1
  • Filed: 11/21/2008
  • Published: 05/28/2009
  • Est. Priority Date: 11/27/2007
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an insulating layer over a substrate;

    forming a non-single-crystal semiconductor layer over the insulating layer;

    irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;

    attaching the non-single-crystal semiconductor layer and the single crystal semiconductor substrate to each other;

    separating the single crystal semiconductor substrate at the damaged region to form a single crystal semiconductor layer over a first portion of the non-single-crystal semiconductor layer;

    forming a semiconductor element of a pixel region using a second portion of the non-single-crystal semiconductor layer; and

    forming a semiconductor element of a drive circuit region using the single crystal semiconductor layer.

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