SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHTING DEVICE

• US 20090134417A1
• Filed: 11/21/2008
• Published: 05/28/2009
• Est. Priority Date: 11/28/2007
• Status: Abandoned Application

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Sato, Masanori, Harada, Mitsunori, Ueno, Kazuhiko
• Application Number:
  US12/276,271
• Publication Number:
  US 20090134417A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

A semiconductor light emitting device can include a light emitting element with a semiconductor epitaxial layer which has a light emitting portion, and an element substrate which supports the semiconductor epitaxial layer and does not transmit light from the light emitting portion. A resin layer can be provided on the element substrate in a way covering side surfaces and an upper surface of the semiconductor epitaxial layer. The resin layer can contain fluorescent substances that wavelength-convert light from the light emitting portion, and can be inclined toward the top at one cross section. Therefore, the semiconductor light emitting device can exhibit a front luminance distribution having a difference in front luminance between the light emitting portion and the light non-emitting portion at an end portion of the semiconductor light emitting device.

Claims

1. A semiconductor light emitting device, comprising:

a light emitting element including a semiconductor epitaxial layer which has a light emitting portion and has an upper surface a lower surface and side surfaces, and an element substrate which supports the semiconductor epitaxial layer and does not transmit light from the light emitting portion; and

a resin layer located on the element substrate and covering the upper surface and at least one of the side surfaces of the semiconductor epitaxial layer, the resin layer including at least one of a scattering material and a fluorescent substance that wavelength-converts light from the light emitting portion, a top surface of the resin layer being inclined toward the element substrate when viewed in cross section.

2. The semiconductor light emitting device according to claim 1, wherein

the resin layer contains a scattering material and a fluorescent substance and has a laminated structure composed of a layer containing scattering material and a layer containing fluorescent substance.

3. The semiconductor light emitting device according to claim 1, wherein

the resin layer contains a fluorescent substance which is deposited on the light emitting element.

4. The semiconductor light emitting device according to claim 1, further comprising:

a plurality of the light emitting elements, each of which has a rectangular shape in top planar view, arranged in a line such that long sides of the plurality of light emitting elements are formed as a straight line,

the resin layer of each of the light emitting elements being inclined toward the element substrate when viewed in a cross section perpendicular to a longitudinal direction of the light emitting elements arranged in the line.

5. The semiconductor light emitting device according to claim 1, wherein

the resin layer is inclined in a form of an approximate arc when viewed in cross section.

6. The semiconductor light emitting device according to claim 5, wherein

the resin layer is formed by having a resin including at least one of scattering material and fluorescent substance delivered by drops to harden thereafter.

7. The semiconductor light emitting device according to claim 5, wherein

the resin layer contains a scattering material and a fluorescent substance and the resin layer has a laminated structure composed of a layer containing the scattering material and a layer containing the fluorescent substance.

8. The semiconductor light emitting device according to claim 5, wherein

the resin layer contains a fluorescent substance which is deposited on the light emitting element.

9. The semiconductor light emitting device according to claim 5, further comprising:

a plurality of the light emitting elements, each of which has a rectangular shape in top planar view, arranged in a line such that long sides of the plurality of light emitting elements are formed as a straight line,

the resin layer of each of the light emitting elements being inclined toward the element substrate when viewed in a cross section perpendicular to a longitudinal direction of the light emitting elements arranged in the line.

10. The semiconductor light emitting device according to claim 5, wherein

the resin layer is configured such that an angle formed between a line tangent to the resin layer and drawn on a starting point of inclination of the resin layer, and a surface of the element substrate, is at least 20 degrees and does not exceed 90 degrees, at a cross section of the resin layer.

11. The semiconductor light emitting device according to claim 10, wherein

the resin layer is formed by having a resin containing at least one of a scattering material and a fluorescent substance delivered by drops to harden thereafter.

12. The semiconductor light emitting device according to claim 10, wherein

the resin layer contains a scattering material and a fluorescent substance and the resin layer has a laminated structure composed of a layer containing the scattering material and a layer containing the fluorescent substance.

13. The semiconductor light emitting device according to claim 10, wherein

the resin layer contains a fluorescent substance which is deposited on the light emitting element.

14. The semiconductor light emitting device according claim 13, wherein

the fluorescent substance is deposited on the light emitting element by a sedimentation process.

15. The semiconductor light emitting device according claim 14, wherein

the resin layer contains a fluorescent substance that includes particles having a particle size smaller than a particle size of particles of the fluorescent substance deposited on the light emitting element, the fluorescent substance with the smaller particle size being dispersed within the resin layer.

16. The semiconductor light emitting device according to claim 10, further comprising:

a plurality of the light emitting elements, each of the light emitting elements having a rectangular shape in top planar view, and each of the light emitting elements being arranged in a line such that long sides of the plurality of light emitting elements are formed as a straight line,

wherein the resin layer is inclined toward the element substrate when viewed in a cross section taken perpendicular to a longitudinal direction of each of the light emitting elements arranged in the line.

17. A lighting device, comprising:

the semiconductor light emitting device according to claim 1; and

a projection device configured to emit an output light from the semiconductor light emitting device in a predetermined direction.

18. The lighting device according to claim 17, wherein

luminance in the vicinity of one long side of the semiconductor light emitting device illuminating an upper side of a light distribution pattern exhibits a maximum value.