LIGHT EMITTING DEVICE AND METHOD OF PRODUCING LIGHT EMITTING DEVICE

• US 20090134427A1
• Filed: 03/15/2007
• Published: 05/28/2009
• Est. Priority Date: 03/17/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Den, Toru, Iwasaki, Tatsuya, Oike, Tomoyuki
• Granted Patent: US 7,888,684 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 33/0087 with a substrate not being a II-VI compound
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/285 characterised by the doping materials

Abstract

There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.

Claims

1. A light emitting device, comprising:

a pair of electrodes;

a light emitter placed between the electrodes; and

a semiconductor laminated to be adjacent to the light emitter,

wherein the semiconductor contains one of a chalcopyrite and an oxychalcogenide.

2. A light emitting device according to claim 1, wherein:

the chalcopyrite is represented by a I-III-VI₂ type; and

a material is chosen from Cu and Ag for the group I, a material is selected from Al, Ga, and In for the group III, and a material is selected from S, Se, and Te for the group VI.

3. A light emitting device according to claim 1, wherein:

a constituent material of the light emitter is represented by ZnS;

A (acceptor), D (donor); and

at least one material is selected from Au, Ag, Cu, and N for the A (acceptor), and at least one material is selected from Al, Ga, In, F, Cl, Br, and I for the D (donor).

4. A light emitting device according to claim 3, wherein at least one of the A (acceptor) and the D (donor) comprises

the same materials as the materials of the group I and the group III which constitute the chalcopyrite when the semiconductor contains the chalcopyrite, and

the same material as the material which constitutes the oxychalcogenide when the semiconductor contains the oxychalcogenide.

5. A light emitting device according to claim 3, wherein the A (acceptor) and the D (donor) have a concentration of 10⁻

3 mol/mol or less.

6. A light emitting device according to claim 1, wherein:

the chalcopyrite is represented by a I-III-S₂ type; and

a material is chosen at least from Cu and Ag for the group I and a material is selected at least from Al and Ga for the group III.

7. A light emitting device according to claim 1, wherein:

a constituent material of the light emitter is represented by ZnS;

A (acceptor), D (donor); and

a material is selected at least from Ag and Cu for the A (acceptor), and at least one material is selected from Al, Ga, and Cl for the D (donor).

8. A light emitting device according to claim 1, wherein lattice matching between the chalcopyrite or the oxychalcogenide and a material which constitutes the light emitter is 10% or less.

9. A light emitting device according to claim 1, wherein the semiconductor is provided on an anode side of the light emitter, and a positive electrode of a DC power supply is connected to an anode and a negative electrode of the DC power supply is connected to a cathode so that light is emitted.

10. A light emitting device according to claim 1, wherein the oxychalcogenide comprises an amorphous material.

11. A light emitting device according to claim 1, wherein the light emitter contains a compound having a crystalline structure of a sphalerite structure.

12. A method of producing a light emitting device in which a semiconductor containing one of a chalcopyrite and an oxychalcogenide and a light emitter in which a compound semiconductor provided with a donor and an acceptor emits light are laminated to be adjacent to each other, the method comprising:

a first step of forming a precursor by placing a first member to be the semiconductor and a second member to be a base material for the light emitter so that the first member and the second member are adjacent to each other; and

a second step of subjecting the precursor to a heat treatment.

13. A method of producing a light emitting device according to claim 12, wherein the heat treatment is performed by a rapid heating method.