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Through Substrate Via Semiconductor Components

  • US 20090134497A1
  • Filed: 11/26/2007
  • Published: 05/28/2009
  • Est. Priority Date: 11/26/2007
  • Status: Active Grant
First Claim
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1. A method for forming a first semiconductor component, the method comprising:

  • forming landing pads on a top side of a substrate, the landing pads comprising multiple levels of conductive plates connected by conductive vias;

    forming trenches in the substrate, wherein an etch for forming trenches starts from a lower surface of the substrate and etches through the substrate and all material layers between the substrate and the landing pads; and

    forming through-vias in the substrate by lining the trenches with an insulator and filling the lined trenches with a conducting material.

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