PROGRAMMABLE STRUCTURED ARRAYS

• US 20090134909A1
• Filed: 01/23/2008
• Published: 05/28/2009
• Est. Priority Date: 12/04/2003
• Status: Active Grant

• Current Assignee: Callahan Cellular LLC (Intellectual Ventures LLC)
• Original Assignee: Callahan Cellular LLC (Intellectual Ventures LLC)
• Inventors: Madurawe, Raminda Udaya
• Granted Patent: US 8,274,309 B2
• Time in Patent Office: Days
• US Class Current: 326/38
• CPC Class Codes: H01L 23/5252 comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/11803 using field effect technology
• CPC Class Codes: H01L 27/11898 Input and output buffer/driver structures
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03K 19/1733 Controllable logic circuits H03K19/177 takes precedence
• CPC Class Codes: H03K 19/1735 by wiring, e.g. uncommitted logic arrays
• CPC Class Codes: H03K 19/17728 Reconfigurable logic blocks, e.g. lookup tables
• CPC Class Codes: H03K 19/1776 for memories
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices
• CPC Class Codes: H10B 10/18 Peripheral circuit regions
• CPC Class Codes: H10B 12/50 Peripheral circuit region structures

Abstract

A programmable semiconductor device includes a user programmable switch comprising a configurable element is positioned above a transistor material layer deposited on a substrate layer.

Claims

1. A programmable semiconductor device, comprising:

a programmable switch to couple two nodes; and

a configurable element to program said switch wherein the configurable element and the switch are positioned above or below a transistor element constructed on a semiconductor substrate layer.

2. The device in claim 1, wherein said programmable switch comprises a first state that couples said two nodes, and a second state that decouples said two nodes.

3. The device of claim 1, wherein the configurable element generates a control signal to program said programmable switch.

4. The device in claim 1, wherein said programmable switch and said configurable element are integrated into a single element.

5. The device of claim 1, wherein a said node is coupled to a conductor located above or below the switch.

6. The device of claim 1, further comprising a configuration circuit to configure said configurable element.

7. The device of claim 1, wherein said configurable element comprises a random access memory element or a read only memory element.

8. The device of claim 1, wherein said configurable element comprises one of fuse link, anti-fuse capacitor, laser-fuse, SRAM cell, DRAM cell, metal optional link, EPROM cell, EEPROM cell, flash cell, ferro-electric element, photo-electric element, optical element, electro-chemical element, electrolytic element, Carbon nano-tube, electro-mechanical element, electro-magnetic element, resistance modulating element and magnetic element.

9. The device of claim 1, wherein said switch and the configurable element are located in one or more planes.

10. The device of claim 1, wherein said programmable switch comprises a thin film transistor.

16. The device of claim 1, further comprising a configuration circuit to configure said configurable element.

17. The device of claim 1, wherein said configurable element comprises one of fuse link, anti-fuse capacitor, laser-fuse, SRAM cell, DRAM cell, metal optional link, EPROM cell, EEPROM cell, flash cell, ferro-electric element, photo-electric element, optical element, electro-chemical element, electrolytic element, Carbon nano-tube, electro-mechanical element, electro-magnetic element, resistance modulating element and magnetic element.

18. The device of claim 1, wherein said switch and the configurable element are located in one or more planes.

11. A programmable semiconductor device, comprising:

a user programmable switch comprising a configurable element and a device to configure the element are positioned above or below a transistor element constructed on a semiconductor substrate layer.

12. The device in claim 11, wherein said programmable switch comprises a first state that couples two nodes, and a second state that decouples two nodes.

13. The device of claim 12, wherein the configurable element is configured to couple or decouple the two nodes.

14. The device in claim 11, wherein said programmable switch and said configurable element are integrated into a single element.

15. The device of claim 11, wherein a said node is coupled to a conductor located above or below the switch.

19. A programmable semiconductor device, comprising:

a programmable switch comprising a configurable element is positioned above or below a transistor element.

20. The device of claim 19, wherein the switch comprises a first state that couples two nodes and a second state that decouples the two nodes.