METHOD FOR DICING WAFER

• US 20090137097A1
• Filed: 11/26/2007
• Published: 05/28/2009
• Est. Priority Date: 11/26/2007
• Status: Abandoned Application

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Chen, Kuo-Ming, Lin, Chu-Fu, Ho, Kai-Kuang
• Application Number:
  US11/945,115
• Publication Number:
  US 20090137097A1
• Time in Patent Office: Days
• US Class Current: 438/462
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2924/19041 being a capacitor

Abstract

A method for dicing a wafer including the following steps is provided. First, a carrier tape is attached to a first side of the wafer. Then, a patterned photoresist layer exposing a scribe line region of the wafer is formed on a second side of the wafer, in which the second side is the opposite side of the first side. After that, a cutting process is performed to the scribe line region from the second side of the wafer to the first side of the wafer through non-mechanical force.

Claims

1. A method for dicing a wafer, comprising:

attaching a carrier tape to a first side of the wafer;

forming a patterned photoresist layer exposing a scribe line region of the wafer on a second side of the wafer, wherein the second side is the opposite side of the first side; and

performing a cutting process to the scribe line region from the second side of the wafer to the first side of the wafer through non-mechanical force.

2. The method for dicing a wafer as claimed in claim 1, wherein the carrier tape is a blue tape or a UV tape.

3. The method for dicing a wafer as claimed in claim 1, wherein the first side and the second side are respectively a front side or a back side of the wafer.

4. The method for dicing a wafer as claimed in claim 1, wherein a process for forming the patterned photoresist layer comprises a photolithography process.

5. The method for dicing a wafer as claimed in claim 1, wherein the implementation method of the non-mechanical force is one selected from a group consisted of a dry etching process, a wet etching process, and a laser cutting process, or any combination thereof.

6. The method for dicing a wafer as claimed in claim 1, further comprising removing the patterned photoresist layer after the cutting process.

7. A method for dicing a wafer, wherein the wafer comprises a substrate and a plurality of material layers disposed on the substrate, the material layers are disposed on a front side of the wafer, and a back side of the wafer is the opposite side of the front side, the method comprising:

attaching a carrier tape to the back side of the wafer;

forming a patterned photoresist layer exposing a scribe line region of the wafer on the front side of the wafer;

performing a first cutting process on the scribe line region from the front side of the wafer until exposing the substrate of the wafer through laser cutting; and

performing a second cutting process on the scribe line region from the front side of the wafer to the back side of the wafer through etching.

8. The method for dicing a wafer as claimed in claim 7, wherein the carrier tape is a blue tape or a UV tape.

9. The method for dicing a wafer as claimed in claim 7, wherein a process for forming the patterned photoresist layer comprises a photolithography process.

10. The method for dicing a wafer as claimed in claim 7, wherein the etching is dry etching or wet etching.

11. The method for dicing a wafer as claimed in claim 7, further comprising removing the patterned photoresist layer after the second cutting process.

12. A method for dicing a wafer, wherein the wafer comprises a substrate and a plurality of material layers disposed on the substrate, the material layers are disposed on a front side of the wafer, and a back side of the wafer is the opposite side of the front side, the method comprising:

attaching a carrier tape to the front side of the wafer;

forming a patterned photoresist layer exposing a scribe line region of the wafer on the back side of the wafer;

performing a first cutting process on the scribe line region from the back side of the wafer until exposing the material layers of the wafer through etching; and

performing a second cutting process on the scribe line region from the back side of the wafer to the front side of the wafer through laser cutting.

13. The method for dicing a wafer as claimed in claim 12, wherein the carrier tape is a blue tape or a UV tape.

14. The method for dicing a wafer as claimed in claim 12, further comprising performing a polishing process on the back side of the wafer after the carrier tape is attached and before the patterned photoresist layer is formed.

15. The method for dicing a wafer as claimed in claim 12, wherein a process for forming the patterned photoresist layer comprises a photolithography process.

16. The method for dicing a wafer as claimed in claim 12, wherein the etching is dry etching or wet etching.

17. The method for dicing a wafer as claimed in claim 12, further comprising removing the patterned photoresist layer after the first cutting process and before the second cutting process.

18. The method for dicing a wafer as claimed in claim 12, further comprising removing the patterned photoresist layer after the second cutting process.