METHOD OF FORMING A SPACER

• US 20090137126A1
• Filed: 11/25/2008
• Published: 05/28/2009
• Est. Priority Date: 11/27/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Kun-Tack, Shim, Woo-Gwan, Hong, Chang-Ki, Kim, Yu-Kyung
• Granted Patent: US 7,825,030 B2
• Time in Patent Office: Days
• US Class Current: 438/703
• CPC Class Codes: H01L 21/30617 Anisotropic liquid etching
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76897 Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step self-aligned silicidation on field effect transistors H01L29/665
• CPC Class Codes: H01L 29/6653 using the removal of at least part of spacer, e.g. disposable spacer

Abstract

A sacrificial layer and wet etch are used to form a sidewall spacer so as to prevent damage to the structure on which the spacer is formed and to the underlying substrate as well. Once the structure is formed on the substrate a spacer formation layer is formed to cover the structure, and a sacrificial layer is formed on the spacer formation layer. The sacrificial layer is wet etched to form a sacrificial layer pattern on that portion of the spacer formation layer extending along a sidewall of the structure. The spacer is formed on the sidewall of the structure by wet etching the spacer formation layer using the sacrificial layer pattern as a mask.

Claims

1. A method of forming a spacer, comprising:

forming on a substrate a pattern structure having a sidewall which is substantially upright with respect to the substrate;

forming a spacer formation layer over the structure such that a portion of the spacer formation layer extends along the sidewall of the structure;

forming a sacrificial layer on the spacer formation layer;

forming a sacrificial layer pattern covering the portion of the spacer formation layer which extends along the sidewall of the pattern structure, wherein the forming of the sacrificial layer pattern comprises anisotropically etching the sacrificial layer using a wet etching solution; and

forming a spacer on the sidewall of the pattern structure by etching the spacer formation layer using the sacrificial layer pattern as a mask.

2. The method of claim 1, wherein the forming of the sacrificial layer comprises forming a layer of luminescent material having an element in Group III on the spacer formation layer, and the forming of the sacrificial layer pattern further comprises treating the sacrificial layer with radiation.

3. The method of claim 2, wherein the sacrificial layer includes at least one film of material selected from the group consisting of gallium nitride, gallium aluminum nitride and indium gallium nitride.

4. The method of claim 2, wherein the forming of the sacrificial layer pattern comprises directing the radiation so as to propagate onto the sacrificial layer along a direction substantially perpendicular to the substrate while the sacrificial layer is being soaked with the wet etching solution.

5. The method of claim 4, wherein the wet etching solution comprises a solution selected from the group consisting of a potassium hydroxide solution, a sodium hydroxide solution, a hydrochloric acid solution, a phosphoric acid solution and a sulfuric acid solution.

6. The method of claim 2, wherein the radiation is ultraviolet light.

7. A method of forming a spacer, comprising:

forming on a substrate a pattern structure having a sidewall which is substantially upright with respect to the substrate;

forming a spacer formation layer over the pattern structure such that a portion of the spacer formation layer extends along the sidewall of the pattern structure;

forming a sacrificial layer pattern covering the portion of the spacer formation layer which extends along the sidewall of the pattern structure; and

forming a spacer on the sidewall of the pattern structure by soaking portions of the spacer formation layer exposed by the sacrificial layer pattern with a wet etching solution.

8. The method of claim 7, wherein the forming of the sacrificial layer pattern comprises forming a sacrificial layer over the spacer formation layer, and anisotropically etching the sacrificial layer with a wet etching solution.

9. The method of claim 8, wherein the spacer is formed as the sacrificial layer pattern is being formed.

10. The method of claim 8, wherein the forming of the spacer on the sidewall of the pattern structure comprises soaking portions of the spacer formation layer exposed by the sacrificial layer pattern with a first wet etching solution, and material of the spacer formation layer and material of the sacrificial layer have an etch selectivity with respect to the first wet etching solution such that the sacrificial layer pattern remains on the spacer after the spacer is formed, and further comprising removing the sacrificial layer pattern by soaking the sacrificial layer pattern with a second wet etching solution having a composition different from that of the first wet etching solution.

11. The method of claim 7, wherein the spacer formation layer includes at least one film of material selected from the group consisting of silicon oxide, silicon nitride, silicon carbon nitride and silicon oxynitride.

12-20. -20. (canceled)