MULTI-STATION PLASMA REACTOR WITH MULTIPLE PLASMA REGIONS

• US 20090139453A1
• Filed: 12/20/2007
• Published: 06/04/2009
• Est. Priority Date: 11/30/2007
• Status: Active Grant

• Current Assignee: Advanced Micro-Fabrication Equipment Inc.
• Original Assignee: Advanced Micro-Fabrication Equipment Inc.
• Inventors: Liu, Yijun, Ho, Henry, Luo, Lee, CHEN, AIHUA, Yin, Gerald, Ni, Tuqiang, Chen, Jinyuan
• Granted Patent: US 8,336,488 B2
• Time in Patent Office: Days
• US Class Current: 118/723.I
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts

Abstract

A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

Claims

1. A plasma chamber, comprising:

a chamber body defining therein a plurality of process stations;

a plurality of rotating substrate holders, each situated in one of the process stations;

a plurality of in-situ plasma generation regions, each plasma generation region provided above one of the substrate holders;

a plurality of quasi-remote plasma generation regions, each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region; and

,

an RF energy source coupled to each of the quasi-remote plasma generation regions.

2. The plasma chamber of claim 1, further comprising a first gas delivery system coupled to the each of the quasi-remote plasma generation regions, and a second gas delivery system coupled to the each of the in-situ plasma generation regions.

3. The plasma chamber of claim 2, wherein the second gas delivery system further delivers gaseous species from each of the quasi-remote plasma generation regions to a corresponding in-situ plasma generation region.

4. The plasma chamber of claim 1, further comprising evacuation manifold coupling all of the process stations to a single vacuum pump.

5. The plasma chamber of claim 1, wherein the RF energy source comprises a high frequency RF generator, a low frequency RF generator, and an RF match.

6. The plasma chamber of claim 1, further comprising a switching mechanism controlling plasma striking in the quasi-remote plasma generation regions and the in-situ plasma generation regions.

7. The plasma chamber of claim 1, further comprising a heater situated within each of the substrate holders.

8. A plasma chamber, comprising:

a chamber body;

a rotating substrate holder situated within the chamber body;

a first showerhead;

a second showerhead spaced apart from the first showerhead and electrically insulted from the first showerhead and from the chamber body, wherein a quasi-remote plasma generation region is defined in between the first and second showerheads and an in-situ plasma generation region is defined between the second showerhead and the substrate holder, the first showerhead delivering first process gas to the quasi-remote plasma generation region and the second showerhead delivering second process gas to the in-situ plasma generation region, the second showerhead further delivering plasma species from the quasi-remote plasma generation region to the in-situ plasma generation region;

an RF source coupled to the first showerhead; and

,

a switching mechanism alternatively coupling the second showerhead to the RF source or to ground potential.

9. The plasma chamber of claim 8, wherein the switching mechanism comprises an arrangement of movable mechanical contacts alternatively coupling the second showerhead to the first showerhead or to the chamber body.

10. The plasma chamber of claim 8, wherein the switching mechanism comprises an electrical switch.

11. The plasma chamber of claim 8, wherein the second showerhead comprises a conductive shower plate, an insulation plate coupled to the conductive shower plate, and a conductive block plate coupled to the insulation plate;

and,

wherein the block plate is coupled to ground and the switching mechanism alternatively couples the conductive shower plate to the RF source or to ground potential.

12. The plasma chamber of claim 11, wherein the switching mechanism further alternatively couples the first showerhead to the RF source or to floating potential.

13. The plasma chamber of claim 8, wherein the second showerhead comprises a shower plate and a conductive block plate coupled to the shower plate, and wherein the block plate comprises hemispherical holes facing the quasi-remote plasma generation region.

14. The plasma chamber according to claim 13, wherein the second showerhead further comprises a buffer plate for even distribution of the second process gas.

15. The plasma chamber according to claim 8, further comprising a heater situated in the substrate holder.

16. The plasma chamber of claim 8, wherein the RF source comprises a high frequency RF generator, a low frequency RF generator, and an RF match.

26. The plasma chamber of claim 8, wherein the switching mechanism further alternatively couples the second showerhead to float potential.

17. A plasma chamber, comprising:

a chamber body defining therein a plurality of process stations;

a plurality of rotating substrate holders, each situated in one of the process stations;

a plurality of upper showerheads, each upper showerhead provided in corresponding process station;

a plurality of lower showerheads, each lower showerhead provided in a corresponding process region and spaced apart from the upper showerhead and electrically insulted from the upper showerhead and from the chamber body, wherein a quasi-remote plasma generation region is defined in between the upper and lower showerheads in each processing region, and an in-situ plasma generation region is defined between the lower showerhead and the substrate holder in each process region, the upper showerhead delivering first process gas to the quasi-remote plasma generation region and the lower showerhead delivering second process gas to the in-situ plasma generation region, the lower showerhead further delivering plasma species from the quasi-remote plasma generation region to the in-situ plasma generation region;

an RF source coupled to the plurality of upper showerheads; and

,

a switching mechanism alternatively coupling the lower showerhead to the RF source or to ground potential.

18. The plasma chamber of claim 17, further comprising evacuation manifold coupling all of the process stations to a single vacuum pump.

19. The plasma chamber of claim 17, wherein the RF energy source comprises a high frequency RF generator, a low frequency RF generator, and an RF match.

20. The plasma chamber of claim 17, wherein the switching mechanism further controls plasma striking in each of the quasi-remote plasma generation regions and each of the in-situ plasma generation regions.

21. The plasma chamber of claim 20, wherein the switching mechanism comprises an arrangement of movable mechanical contacts alternatively coupling each of the lower showerheads to the corresponding upper showerhead or to the chamber body.

22. The plasma chamber of claim 20, wherein the switching mechanism comprises an electrical switch.

23. The plasma chamber of claim 17, wherein each of the lower showerheads comprises a conductive shower plate, an insulation plate coupled to the conductive shower plate, and a conductive block plate coupled to the insulation plate;

and,

wherein the block plate is coupled to ground and the switching mechanism alternatively couples the conductive shower plate to the upper showerhead or to ground potential.

24. The plasma chamber of claim 17, wherein the switching mechanism further alternatively couples the first showerhead to the RF source or to floating potential.

25. The plasma chamber of claim 17, wherein each of the lower showerheads comprises a shower plate and a conductive block plate coupled to the shower plate, and wherein the block plate comprises hemispherical holes facing the quasi-remote plasma generation region.

27. The plasma chamber of claim 17, wherein the switching mechanism further alternatively couples the lower showerhead to float potential.

28. A plasma chamber, comprising:

a chamber body;

a rotating substrate holder situated within the chamber body;

a first showerhead;

a second showerhead spaced apart from the first showerhead and electrically insulted from the first showerhead and from the chamber body, wherein a quasi-remote plasma generation region is defined in between the first and second showerheads and an in-situ plasma generation region is defined between the second showerhead and the substrate holder, the first showerhead delivering first process gas to the quasi-remote plasma generation region and the second showerhead delivering second process gas to the in-situ plasma generation region, the second showerhead further delivering plasma species from the quasi-remote plasma generation region to the in-situ plasma generation region;

a first RF source selectively coupled to the first showerhead either by mechanical switching or software control; and

,

a second RF source selectively coupled to the second showerhead either by mechanical switching or software control.