PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF

• US 20090139558A1
• Filed: 11/19/2008
• Published: 06/04/2009
• Est. Priority Date: 11/29/2007
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: IKEDA, Hisao, YAMAZAKI, Shunpei
• Application Number:
  US12/273,653
• Publication Number:
  US 20090139558A1
• Time in Patent Office: Days
• US Class Current: 136/244
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 31/0201 comprising specially adapted module bus-bar structures
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0504 specially adapted for series or parallel connection of solar cells in a module
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1824 Special manufacturing methods for microcrystalline Si, uc-Si
• CPC Class Codes: H01L 31/1872 Recrystallisation
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: H01L 31/202 including only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/545 Microcrystalline silicon PV cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

It is an object of the present invention to provide a photoelectric conversion device with an excellent photoelectric converting characteristic while effectively utilizing silicon semiconductor material. A photoelectric conversion device comprises a first electrode, a first unit cell including a single-crystal semiconductor layer which is obtained by cleaving a single crystal semiconductor substrate at a damaged layer, a second unit cell including a non-single-crystal semiconductor layer, an intermediate layer including a transition metal oxide, and a second electrode, wherein the first unit cell and second unit cell are connected in series with the intermediate layer interposed therebetween and are sandwiched between the first electrode and the second electrode.

Claims

1. A photoelectric conversion device comprising:

a first electrode over a substrate;

a first unit cell including a single crystal semiconductor layer over the first electrode;

an intermediate layer over the first unit cell;

a second unit cell including a semiconductor layer over the intermediate layer; and

a second electrode over the second unit cell,

wherein the semiconductor layer includes a first impurity semiconductor layer, a second impurity semiconductor layer and a non-single-crystal semiconductor layer interposed between the first and second impurity semiconductor layers, and

wherein the first impurity semiconductor layer has one conductivity type and the second impurity semiconductor layer has a conductivity type opposite to the conductivity type of the first impurity semiconductor layer.

2. The photoelectric conversion device according to claim 1,

wherein the intermediate layer includes a transition metal oxide, and

wherein the transition metal oxide is an oxide of a metal belonging to any of Groups 4 to 8 in a periodic table.

3. The photoelectric conversion device according to claim 2,

wherein the transition metal oxide is the group consisting of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

4. The photoelectric conversion device according to claim 1,

wherein the intermediate layer includes a transition metal oxide and an organic compound.

5. The photoelectric conversion device according to claim 4,

wherein the organic compound is the group consisting of an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a macromolecular compound.

6. The photoelectric conversion device according to claim 1,

wherein the intermediate layer includes a first layer having a composite material of a transition metal oxide and an organic compound and a second layer having a transition metal oxide, and

wherein the first layer and the second layer are stacked.

7. The photoelectric conversion device according to claim 1,

wherein the intermediate layer comprises a first layer including a transition metal oxide, a second layer including a composite material of a transition metal oxide and an organic compound, and a third layer including a transition metal oxide, and

wherein the second layer is interposed between the first layer and the third layer.

8. The photoelectric conversion device according to claim 1,

wherein the single crystal semiconductor layer has a thickness of 0.1 μ

m or more and 10 μ

m or less.

9. The photoelectric conversion device according to claim 1,

wherein the single crystal semiconductor layer is a single crystal silicon layer and the non-single-crystal semiconductor layer is an amorphous silicon layer.

10. The photoelectric conversion device according to claim 1,

wherein the first unit cell includes a third impurity semiconductor layer and a fourth impurity semiconductor layer,

wherein the single crystal semiconductor layer is interposed between the third impurity semiconductor layer and the fourth impurity semiconductor layer, and

wherein the third impurity semiconductor layer has one conductivity type and the fourth impurity semiconductor layer has a conductivity type opposite to the conductivity type of the third impurity semiconductor layer.

11. A photoelectric conversion device comprising:

a first electrode over a substrate;

a first unit cell including a single crystal semiconductor layer over the first electrode;

a first intermediate layer over the first unit cell;

a second unit cell including a first semiconductor layer over the first intermediate layer;

a second intermediate layer over the second unit cell;

a third unit cell including a second semiconductor layer over the second intermediate layer; and

a second electrode over the third unit cell,

wherein the first semiconductor layer includes a first impurity semiconductor layer, a second impurity semiconductor layer and a first non-single-crystal semiconductor layer interposed between the first and second impurity semiconductor layers,

wherein the second semiconductor layer includes a third impurity semiconductor layer, a fourth impurity semiconductor layer and a second non-single-crystal semiconductor layer interposed between the third and fourth impurity semiconductor layers,

wherein the first impurity semiconductor layer has one conductivity type and the second impurity semiconductor layer has a conductivity type opposite to the conductivity type of the first impurity semiconductor layer, and

wherein the third impurity semiconductor layer has one conductivity type and the fourth impurity semiconductor layer has a conductivity type opposite to the conductivity type of the third impurity semiconductor layer.

12. The photoelectric conversion device according to claim 11,

wherein at least one of the first and second intermediate layers includes a transition metal oxide, and

wherein the transition metal oxide is an oxide of a metal belonging to any of Groups 4 to 8 in a periodic table.

13. The photoelectric conversion device according to claim 12,

wherein the transition metal oxide is any of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

14. The photoelectric conversion device according to claim 11,

wherein at least one of the first and second intermediate layers includes a transition metal oxide and an organic compound.

15. The photoelectric conversion device according to claim 14,

wherein the organic compound is the group consisting of an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a macromolecular compound.

16. The photoelectric conversion device according to claim 11,

wherein at least one of the first and second intermediate layers includes a first layer having a composite material of a transition metal oxide and an organic compound and a second layer having a transition metal oxide, and

wherein the first layer and the second layer are stacked.

17. The photoelectric conversion device according to claim 11,

wherein at least one of the first and second intermediate layers comprises a first layer including a transition metal oxide, a second layer including a composite material of a transition metal oxide and an organic compound, and a third layer including a transition metal oxide, and

wherein the second layer is interposed between the first layer and the third layer.

18. The photoelectric conversion device according to claim 11,

wherein the first semiconductor layer has a thickness of 0.1 μ

m or more and 10 μ

m or less.

19. The photoelectric conversion device according to claim 11,

wherein the single crystal semiconductor layer is single crystal silicon, the first non-single-crystal semiconductor layer is microcrystal silicon, and the second non-single-crystal semiconductor layer is amorphous silicon.

20. The photoelectric conversion device according to claim 11,

wherein the single crystal semiconductor layer is single crystal silicon, the first non-single-crystal semiconductor layer is amorphous silicon, and the second non-single-crystal semiconductor layer is microcrystal silicon.

21. The photoelectric conversion device according to claim 11,

wherein the first unit cell includes a fifth impurity semiconductor layer and a sixth impurity semiconductor layer,

wherein the single crystal semiconductor layer is interposed between the fifth impurity semiconductor layer and the sixth impurity semiconductor layer, and

wherein the fifth impurity semiconductor layer has one conductivity type and the sixth impurity semiconductor layer has a conductivity type opposite to the conductivity type of the fifth impurity semiconductor layer.

22. A method for manufacturing a photoelectric conversion device, comprising the steps of:

introducing a cluster ion into a single crystal semiconductor substrate through one surface of the single crystal semiconductor substrate to form a damaged layer;

forming a first impurity semiconductor layer on the one surface of single crystal semiconductor substrate, wherein the first impurity semiconductor layer has one conductivity type;

forming a first electrode over the first impurity semiconductor layer;

forming an insulating layer over the first electrode;

bonding the insulating layer to a supporting substrate;

cleaving the single crystal semiconductor substrate at the damaged layer, so that a single crystal semiconductor layer remains over the supporting substrate;

forming a second impurity semiconductor layer on a cleavage plane side of the single crystal semiconductor layer, wherein the second impurity semiconductor layer has a conductivity type opposite to the conductivity type of the first impurity semiconductor layer;

forming an intermediate layer over the second impurity semiconductor layer;

forming a third impurity semiconductor layer over the intermediate layer, wherein the third impurity semiconductor layer has one conductivity type;

forming a non-single-crystal semiconductor layer over the third impurity semiconductor layer;

forming a fourth impurity semiconductor layer over the non-single-crystal semiconductor layer, wherein the fourth impurity semiconductor layer has a conductivity type opposite to the conductivity type of the third impurity semiconductor layer; and

forming a second electrode over the fourth impurity semiconductor layer.

23. The method for manufacturing a photoelectric conversion device according to claim 22,

wherein the cluster ion is a hydrogen ion and larger in mass than a hydrogen molecular, and

wherein the cluster ion is introduced by irradiating the single crystal semiconductor substrate with an ion beam containing the cluster ion by 50% or more.

24. The method for manufacturing a photoelectric conversion device according to claim 22, wherein the damaged layer is formed at a depth of 10 μ

m or less from the one surface of single crystal semiconductor substrate.

25. The method for manufacturing a photoelectric conversion device according to claim 22, wherein the intermediate layer is formed by co-evaporation method to include a transition metal oxide and an organic compound.

26. The method for manufacturing a photoelectric conversion device according to claim 22,

wherein the intermediate layer includes a first layer having a composite material of a transition metal oxide and an organic compound and a second layer having a transition metal oxide, and

wherein the first layer and the second layer are stacked.

27. The method for manufacturing a photoelectric conversion device according to claim 22,

wherein the intermediate layer comprises a first layer including a transition metal oxide, a second layer including a composite material of a transition metal oxide and an organic compound, and a third layer including a transition metal oxide, and

wherein the second layer is interposed between the first layer and the third layer.

28. A method for manufacturing a photoelectric conversion device, comprising the steps of:

introducing a cluster ion into a single crystal semiconductor substrate through one surface of the single crystal semiconductor substrate to form a damaged layer;

forming a first impurity semiconductor layer on the one surface of single crystal semiconductor substrate, wherein the first impurity semiconductor layer has one conductivity type;

forming a first electrode over the first impurity semiconductor layer;

forming an insulating layer over the first electrode;

bonding the insulating layer to a supporting substrate;

cleaving the single crystal semiconductor substrate at the damaged layer, so that a single crystal semiconductor layer remains over the supporting substrate;

forming a second impurity semiconductor layer on a cleavage plane side of the single crystal semiconductor layer, wherein the second impurity semiconductor layer has a conductivity type opposite to the conductivity type of the first impurity semiconductor layer;

forming a first intermediate layer over the second impurity semiconductor layer;

forming a third impurity semiconductor layer over the first intermediate layer, wherein the third impurity semiconductor layer has one conductivity type;

forming a first non-single-crystal semiconductor layer over the third impurity semiconductor layer;

forming a fourth impurity semiconductor layer over the first non-single-crystal semiconductor layer, wherein the second impurity semiconductor layer has a conductivity type opposite to the conductivity type of the first impurity semiconductor layer;

forming a second intermediate layer over the fourth impurity semiconductor layer;

forming a fifth impurity semiconductor layer over the second intermediate layer, wherein the fifth impurity semiconductor layer has one conductivity type;

forming a second non-single-crystal semiconductor layer over the fifth impurity semiconductor layer;

forming a sixth impurity semiconductor layer over the second non-single-crystal semiconductor layer, wherein the sixth impurity semiconductor layer has a conductivity type opposite to the conductivity type of the fifth impurity semiconductor layer; and

forming a second electrode over the sixth impurity semiconductor layer.

29. The method for manufacturing a photoelectric conversion device according to claim 28,

wherein the cluster ion is a hydrogen ion and larger in mass than a hydrogen molecular, and

wherein the cluster ion is introduced by irradiating the single crystal semiconductor substrate with an ion beam containing the cluster ion by 50% or more.

30. The method for manufacturing a photoelectric conversion device according to claim 28, wherein the damaged layer is formed at a depth of 10 μ

m or less from the one surface of single crystal semiconductor substrate.

31. The method for manufacturing a photoelectric conversion device according to claim 28, wherein at least one of the first and second intermediate layers is formed by co-evaporation method to include a transition metal oxide and an organic compound.

32. The method for manufacturing a photoelectric conversion device according to claim 28,

wherein at least one of the first and second intermediate layers includes a first layer having a composite material of a transition metal oxide and an organic compound and a second layer having a transition metal oxide, and

wherein the first layer and the second layer are stacked.

33. The method for manufacturing a photoelectric conversion device according to claim 28,

wherein at least one of the first and second intermediate layers comprises a first layer including a transition metal oxide, a second layer including a composite material of a transition metal oxide and an organic compound, and a third layer including a transition metal oxide, and

wherein the second layer is interposed between the first layer and the third layer.