APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING NEUTRALIZED BEAMS INCLUDING APPLYING A VOLTAGE TO A SUBSTRATE SUPPORT

• US 20090140132A1
• Filed: 11/26/2008
• Published: 06/04/2009
• Est. Priority Date: 11/30/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Yong-Jin, Lee, Do-Haing, Kim, Ha-Na
• Granted Patent: US 8,089,042 B2
• Time in Patent Office: Days
• US Class Current: 250/251
• CPC Class Codes: H01J 2237/0041 Neutralising arrangements
• CPC Class Codes: H01J 2237/04756 with electrostatic means
• CPC Class Codes: H01J 2237/20 Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
• CPC Class Codes: H01J 2237/31 Processing objects on a macro-scale
• CPC Class Codes: H01J 37/30 Electron-beam or ion-beam tubes for localised treatment of objects

Abstract

An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.

Claims

1. A substrate processing apparatus comprising:

an ion source generating device configured to form an ion source;

an ion extraction device configured to extract and accelerate ions from the ion source;

an ion neutralizing device configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams, wherein a remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams;

a substrate support configured to support a substrate such that the neutralized beams are directed towards the substrate support; and

a substrate power supply configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.

2. The substrate processing apparatus according to claim 1, wherein the ion source generating device forms plasma serving as the ion source.

3. The substrate processing apparatus according to claim 1, wherein the ion extraction device includes a first grid unit adjacent to the ion source formed by the ion source generating device and a second grid unit positioned opposite to the ion source with the first grid unit interposed therebetween.

4. The substrate processing apparatus according to claim 3 further comprising:

first and second grid power supplies connected to the first and second grid units, respectively,

wherein the first and second grid power supplies supply different voltages to the first and second grid units.

5. The substrate processing apparatus according to claim 4, wherein the ions have a polarity associated therewith, and the first grid power supply applies a first voltage having a polarity that is the same as the polarity of the ions to the first grid unit, and the second grid power supply applies a second voltage having a different polarity from the ions to the second grid unit.

6. The substrate processing apparatus according to claim 4, wherein the voltage that is applied to the substrate support by the substrate power supply has a polarity that s the same as a polarity of a voltage applied to the first grid unit to the substrate support.

7. The substrate processing apparatus according to claim 4, wherein the substrate power supply applies a voltage higher than a voltage applied to the first grid unit to the substrate support.

8. The substrate processing apparatus according to claim 4 further comprising:

a controller configured to control the substrate power supply and the first grid power supply.

9. The substrate processing apparatus according to claim 3, wherein the ion extraction device further includes a third grid unit that is grounded and positioned opposite to the first grid unit with the second grid unit interposed therebetween, and the first, second and third grid units have through-holes in communication with each other.

10. The substrate processing apparatus according to claim 1, wherein the remaining portion of the ions has a polarity associated therewith, and the voltage of the substrate support that is applied by the substrate power supply has a polarity that is the same as the polarity of the remaining portion of the ions.

11-19. -19. (canceled)