Oxide semiconductor thin film transistors and fabrication methods thereof
First Claim
1. A method of manufacturing an oxide semiconductor thin film transistor, the method comprising:
- forming an oxide semiconductor channel layer on a substrate;
forming source and drain electrodes at opposing sides of the channel layer; and
oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer.
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Accused Products
Abstract
Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.
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Citations
20 Claims
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1. A method of manufacturing an oxide semiconductor thin film transistor, the method comprising:
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forming an oxide semiconductor channel layer on a substrate; forming source and drain electrodes at opposing sides of the channel layer; and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An oxide semiconductor thin film transistor, comprising:
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an oxide semiconductor channel layer on a substrate, a surface of the channel layer being oxidized by an oxidizing material that contacts the surface of the channel layer; and source and drain electrodes at opposing sides of the channel layer. - View Dependent Claims (17, 18, 19, 20)
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Specification