DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF
First Claim
Patent Images
1. A display device comprising:
- a substrate;
a display portion comprising;
a pixel comprising a first transistor;
a scan line driver circuit connected to the pixel; and
a signal line driver circuit connected to the pixel;
a peripheral circuit portion comprising a second transistor,wherein the first transistor comprises;
a first single crystal semiconductor layer formed over the substrate with a bonding layer interposed therebetween; and
a first gate electrode formed over the first single crystal semiconductor layer with a first gate insulating layer interposed therebetween, andwherein the second transistor comprises;
a second single crystal semiconductor layer formed over the substrate with the bonding layer interposed therebetween; and
a second gate electrode formed over the second single crystal semiconductor layer with a second gate insulating layer interposed therebetween.
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Abstract
An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.
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Citations
19 Claims
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1. A display device comprising:
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a substrate; a display portion comprising; a pixel comprising a first transistor; a scan line driver circuit connected to the pixel; and a signal line driver circuit connected to the pixel; a peripheral circuit portion comprising a second transistor, wherein the first transistor comprises; a first single crystal semiconductor layer formed over the substrate with a bonding layer interposed therebetween; and a first gate electrode formed over the first single crystal semiconductor layer with a first gate insulating layer interposed therebetween, and wherein the second transistor comprises; a second single crystal semiconductor layer formed over the substrate with the bonding layer interposed therebetween; and a second gate electrode formed over the second single crystal semiconductor layer with a second gate insulating layer interposed therebetween. - View Dependent Claims (2, 3, 4)
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5. A display device comprising:
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a substrate; a display portion comprising; a pixel comprising; a first transistor; and a pixel electrode; a scan line driver circuit connected to the pixel; and a signal line driver circuit connected to the pixel; a power supply circuit electrically connected to the pixel electrode via the first transistor; a peripheral circuit portion comprising a second transistor, wherein the first transistor comprises; a first single crystal semiconductor layer formed over the substrate with a bonding layer interposed therebetween; and a first gate electrode formed over the first single crystal semiconductor layer with a first gate insulating layer interposed therebetween, wherein the second transistor comprises; a second single crystal semiconductor layer formed over the substrate with the bonding layer interposed therebetween; and a second gate electrode formed over the second single crystal semiconductor layer with a second gate insulating layer interposed therebetween, wherein the pixel has a longer side and a shorter side, wherein a channel length direction of the first transistor is parallel to the longer side, and wherein 143≦
L≦
AX (0<
A≦
0.7, X≧
204) is satisfied under a condition that a channel length of the first transistor is L μ
m and a length of the longer side is X μ
m. - View Dependent Claims (6, 7, 8, 9)
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10. A method for manufacturing a display device comprising the steps of:
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doping an ion into a region in a first substrate, wherein the first substrate is a single crystal semiconductor substrate; forming a bonding layer over the first substrate; adhering the bonding layer to a second substrate, wherein the second substrate has an insulating surface; forming a semiconductor layer over the second substrate with the bonding layer interposed therebetween, by cleaving the first substrate using the region as a cleavage plane; forming a first semiconductor island and a second semiconductor island, by etching the semiconductor layer; forming a gate insulating layer over the first semiconductor island and over the second semiconductor island; forming a first gate electrode over the first semiconductor island with the gate insulating layer interposed therebetween; and forming a second gate electrode over the second semiconductor island with the gate insulating layer interposed therebetween, wherein the first semiconductor island is formed in a peripheral circuit portion, and wherein the second semiconductor island is formed in a display portion. - View Dependent Claims (11, 12, 13, 14)
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15. A method for manufacturing a display device comprising the steps of:
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doping an ion into a region in a first substrate, wherein the first substrate is a single crystal semiconductor substrate; forming a bonding layer over the first substrate; adhering the bonding layer to a second substrate, wherein the second substrate has an insulating surface; forming a semiconductor layer over the second substrate with the bonding layer interposed therebetween, by cleaving the first substrate using the region as a cleavage plane; forming a first semiconductor island and a second semiconductor island, by etching the semiconductor layer; forming a first gate insulating layer over the first semiconductor island and over the second semiconductor island; forming a first gate electrode over the first semiconductor island with the first gate insulating layer interposed therebetween; forming a second gate insulating layer over the first gate electrode and the first gate insulating layer; forming a second gate electrode over the second semiconductor island with the first gate insulating layer and the second gate insulating layer interposed therebetween, wherein the first semiconductor island is formed in a peripheral circuit portion, and wherein the second semiconductor island is formed in a display portion. - View Dependent Claims (16, 17, 18, 19)
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Specification