III Nitride Crystal Substrate, and Light-Emitting Device and Method of Its Manufacture
First Claim
1. A Group-III nitride crystal substrate having a major face whose surface area is not less than 10 cm2, wherein, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is between 1×
- 104 cm−
2 and 3×
106 cm−
2 inclusive, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater.
1 Assignment
0 Petitions
Accused Products
Abstract
Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm2 and, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is from 1×104 cm−2 to 3×106 cm−2, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater.
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Citations
6 Claims
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1. A Group-III nitride crystal substrate having a major face whose surface area is not less than 10 cm2, wherein, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is between 1×
- 104 cm−
2 and 3×
106 cm−
2 inclusive, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater. - View Dependent Claims (2, 3, 4, 5, 6)
- 104 cm−
Specification