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Nonvolatile memory devices and methods of forming the same

  • US 20090140313A1
  • Filed: 11/25/2008
  • Published: 06/04/2009
  • Est. Priority Date: 11/30/2007
  • Status: Abandoned Application
First Claim
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1. A method of forming a nonvolatile memory device, comprising:

  • forming a device isolation layer defining active regions in a semiconductor substrate;

    forming a plurality of transistors on the active regions, the plurality of transistors comprising a pair of adjacent string selection transistors, a pair of adjacent ground selection transistors, and a plurality of memory cell transistors connected in series between the string selection transistors and ground selection transistors;

    forming a common source line using selective epitaxial growth (SEG) between a pair of adjacent ground selection transistors so that the common source line has a top surface lower than a top surface of the pair of adjacent ground selection transistors.

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