Nonvolatile memory devices and methods of forming the same
First Claim
1. A method of forming a nonvolatile memory device, comprising:
- forming a device isolation layer defining active regions in a semiconductor substrate;
forming a plurality of transistors on the active regions, the plurality of transistors comprising a pair of adjacent string selection transistors, a pair of adjacent ground selection transistors, and a plurality of memory cell transistors connected in series between the string selection transistors and ground selection transistors;
forming a common source line using selective epitaxial growth (SEG) between a pair of adjacent ground selection transistors so that the common source line has a top surface lower than a top surface of the pair of adjacent ground selection transistors.
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Abstract
A method of forming nonvolatile memory devices according to example embodiments of the present invention includes forming a device isolation layer defining active regions in a semiconductor substrate; forming a plurality of transistors on the active regions, the plurality of transistors comprising a pair of adjacent string selection transistors, a pair of adjacent ground selection transistors, and a plurality of memory cell transistors connected in series between the string selection transistors and ground selection transistors; forming a common source line using SEG between a pair of adjacent ground selection transistors so that the common source line has a top surface lower than a top surface of the pair of adjacent ground selection transistors.
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Citations
20 Claims
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1. A method of forming a nonvolatile memory device, comprising:
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forming a device isolation layer defining active regions in a semiconductor substrate; forming a plurality of transistors on the active regions, the plurality of transistors comprising a pair of adjacent string selection transistors, a pair of adjacent ground selection transistors, and a plurality of memory cell transistors connected in series between the string selection transistors and ground selection transistors; forming a common source line using selective epitaxial growth (SEG) between a pair of adjacent ground selection transistors so that the common source line has a top surface lower than a top surface of the pair of adjacent ground selection transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A nonvolatile memory device, comprising:
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a device isolation layer defining active regions in a semiconductor substrate; a pair of adjacent string selection transistors on the active regions; a pair of adjacent ground selection transistors on the active regions; a plurality of memory cell transistors connected in series between the string selection transistors and the ground selection transistors on the active region; and a common source line including a first silicon layer and a first metal silicide layer on the first silicon layer formed on the active region between the pair of adjacent ground selection transistors using selective epitaxial growth (SEG), wherein the common source line has a top surface lower than top surfaces of the transistors. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification