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LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH A TRENCH FIELD PLATE

  • US 20090140343A1
  • Filed: 12/04/2007
  • Published: 06/04/2009
  • Est. Priority Date: 12/04/2007
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a trench located in a semiconductor substrate and containing at least one trench sidewall and a trench bottom surface;

    a body having a doping of a first conductivity type and located in said semiconductor substrate;

    a drift region having a doping of a second conductivity type and bounded by said at least one trench sidewall and said trench bottom surface, wherein said second conductivity type is the opposite of said first conductivity type;

    a drift region dielectric of unitary construction comprising a dielectric material, located directly on and inside of said trench, and containing a bottom dielectric portion vertically abutting said trench bottom surface and a sidewall dielectric portion laterally abutting said at least one trench sidewall; and

    a gate electrode abutting said gate dielectric and said bottom dielectric portion.

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