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Semiconductor Device and Method of Making Integrated Passive Devices

  • US 20090140421A1
  • Filed: 12/03/2007
  • Published: 06/04/2009
  • Est. Priority Date: 10/29/2005
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a first substrate on a backside of the semiconductor device;

    forming a first insulating layer over the first substrate;

    forming a first conductive layer over the first insulating layer;

    forming a second insulating layer over the first conductive layer;

    forming a second conductive layer over the second insulating layer;

    forming a third conductive layer over the first insulating layer;

    forming a first passivation layer over the first, second, and third conductive layers;

    forming a fourth conductive layer over the first passivation layer in electrical contact with the third conductive layer;

    forming a second passivation layer over the first passivation layer;

    attaching a carrier to the second passivation layer;

    removing the first substrate;

    forming a non-silicon substrate over the first insulating layer on the backside of the semiconductor device; and

    removing the carrier.

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