LIGHT OUTPUT ENHANCED GALLIUM NITRIDE BASED THIN LIGHT EMITTING DIODE

• US 20090141502A1
• Filed: 12/01/2008
• Published: 06/04/2009
• Est. Priority Date: 11/30/2007
• Status: Abandoned Application

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Sonoda, Junichi, DenBaars, Steven P., Saito, Makoto, Nakamura, Shuji, Iso, Kenji
• Application Number:
  US12/325,939
• Publication Number:
  US 20090141502A1
• Time in Patent Office: Days
• US Class Current: 362/311.20
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A gallium nitride (GaN) based light emitting device, wherein the device comprises a first surface and a second surface, and the first surface and second surface are separated by a thickness of less than 100 micrometers, and preferably less than 20 micrometers. The first surface may be roughened or textured. A silver or silver alloy may be deposited on the second surface. The second surface of the device may be bonded to a permanent substrate.

Claims

1. A III-nitride based light emitting device comprising:

an active region for emitting light;

one or more thicknesses of III-nitride between the active region and one or more light extraction or reflection surfaces of the light emitting device, such that an intensity of the light at the extraction surfaces is attenuated by no more than 5% as compared to the intensity of the light at the active region, wherein attenuation is due to absorption of the light by the III-nitride.

2. The device of claim 1, wherein:

the III-nitride comprises the active region between a p-type layer and an n-type layer,

the light extraction surfaces are a first surface of the III-nitride and a second surface of the III-nitride,

the active region comprises an epitaxial growth having a growth direction, and

the thicknesses are such that;

(1) a first distance along the growth direction between the first surface and the second surface is less than 100 micrometers, and

(2) the light emitted by the active region in a direction parallel to the growth direction travels a second distance within the III-nitride of at most twice the first distance.

3. The device of claim 2, wherein the first surface is roughened or textured.

4. The device of claim 3, wherein the second surface is a surface of a metal deposited on the p-type layer, and the metal has at least 70% reflectivity for the light.

5. The device of claim 4, wherein the metal is silver or a silver based alloy.

6. The device of claim 4, wherein the second surface of the device is bonded to a permanent substrate.

7. The device of claim 6, wherein the first distance is less than 20 micrometers.

8. The device of claim 6, wherein the n-type layer is on a substrate, the first surface is a surface of the substrate, and the n-type layer, active region, and p-type layer comprise a III-nitride material.

9. A method for increasing internal quantum efficiency (IQE) of a III-nitride light emitting device by reducing re-absorption of light by the device, comprising:

providing an active region for emitting the light; and

providing one or more thicknesses of III-nitride between the active region and one or more light extraction or reflection surfaces of the light emitting device, such that an intensity of the light at the extraction surfaces is attenuated by no more than 5% as compared to the intensity of the light at the active region, wherein attenuation is due to absorption of the light by the III-nitride.

10. A method for emitting light from a light emitting device with increased internal quantum efficiency, comprising:

emitting light from an active region of the device, wherein one or more thicknesses of III-nitride, between the active region and one or more light extraction or reflection surfaces of the light emitting device, are such that an intensity of the light at the extraction surfaces is attenuated by no more than 5% as compared to the intensity of the light at the active region, wherein attenuation is due to absorption of the light by the III-nitride.

11. A III-nitride based light emitting device comprising:

a first surface for extracting light and a second surface for extracting light or redirecting light towards the first surface, wherein the first surface and second surface are separated by a thickness of less than 100 micrometers.