Semiconductor device having memory array, method of writing, and systems associated therewith
First Claim
Patent Images
1. A semiconductor device, comprising:
- a non-volatile memory cell array;
a control unit configured to generate a mode signal indicating if a flash mode has been enabled;
a write circuit configured to write in the non-volatile memory cell array based on the mode signal such that the write circuit disables erasing the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the non-volatile memory cell array is received.
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Abstract
In one embodiment, the semiconductor device, includes a non-volatile memory cell array, and a control unit configured to generate a mode signal indicating if a flash mode has been enabled. A write circuit is configured to write in the non-volatile memory cell array based on the mode signal such that the write circuit disables erasing the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the non-volatile memory cell array is received.
31 Citations
21 Claims
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1. A semiconductor device, comprising:
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a non-volatile memory cell array; a control unit configured to generate a mode signal indicating if a flash mode has been enabled; a write circuit configured to write in the non-volatile memory cell array based on the mode signal such that the write circuit disables erasing the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the non-volatile memory cell array is received. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 19)
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17. A semiconductor device, comprising:
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a non-volatile memory cell array including a first portion and a second portion; a mode control circuit configured to generate a first mode signal indicating if a flash mode has been enabled for the first portion of the non-volatile memory cell array, and the mode control circuit configured to generate a second mode signal indicating if a flash mode has been enabled for the second portion of the non-volatile memory cell array; a first write circuit configured to write in the first portion of the non-volatile memory cell array based on the first mode signal such that the first write circuit disables erasing the first portion of the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the first portion of the non-volatile memory cell array is received; and a second write circuit configured to write in the second portion of the non-volatile memory cell array based on the second mode signal such that the second write circuit disables erasing the second portion of the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the second portion of the non-volatile memory cell array is received.
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18. A method of writing to a non-volatile memory cell array, comprising:
disabling erasing the non-volatile memory cell array if a flash mode of operation has not been enabled and instructions to erase one or more cells of the non-volatile memory cell array are received.
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20. A card, comprising:
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a memory, the memory including, a non-volatile memory cell array; a control unit configured to generate a mode signal indicating if a flash mode has been enabled; a write circuit configured to write in the non-volatile memory cell array based on the mode signal such that the write circuit disables erasing the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the non-volatile memory cell array is received; and a control unit configured to control the memory.
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21. A system, comprising:
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a bus; a semiconductor device connected to the bus, the semiconductor device including, a non-volatile memory cell array; a control unit configured to generate a mode signal indicating if a flash mode has been enabled; a write circuit configured to write in the non-volatile memory cell array based on the mode signal such that the write circuit disables erasing the non-volatile memory cell array if the flash mode has not been enabled and instructions to erase one or more cells of the non-volatile memory cell array is received; and an input/output device connected to the bus; and a processor connected to the bus, the processor configured to communicate with the input/output device and the semiconductor device via the bus.
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Specification