METHOD OF MAKING AN IMPROVED SELECTIVE EMITTER FOR SILICON SOLAR CELLS
First Claim
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1. A method of selectively doping predetermined regions of a surface of a crystalline silicon body comprising:
- forming a passivation layer on the surface, wherein the passivation layer comprises a dielectric material and a first amount of a doping atom;
patterning the passivation layer to define apertures therein;
plasma implanting a second amount of a doping atom into the patterned structure passivation layer; and
annealing the body.
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Abstract
A method for forming a selective emitter on a silicon solar cell is provided including forming an oxide layer on a surface of the P-type silicon substrate, implanting phosphorus doping atoms into the oxide layer on the substrate using plasma immersion ion implantation, patterning the oxide layer, annealing the substrate to provide heavily doped regions in the patterned regions and a lightly doped region between the patterned regions, and providing metal contacts to the heavily doped regions.
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Citations
26 Claims
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1. A method of selectively doping predetermined regions of a surface of a crystalline silicon body comprising:
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forming a passivation layer on the surface, wherein the passivation layer comprises a dielectric material and a first amount of a doping atom; patterning the passivation layer to define apertures therein; plasma implanting a second amount of a doping atom into the patterned structure passivation layer; and annealing the body. - View Dependent Claims (3, 4, 5, 6, 7, 8, 22, 25)
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2. (canceled)
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9. A method for forming a selective emitter on a silicon solar cell including a substrate, the method comprising:
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positioning a physical mask having a plurality of apertures formed at a first position over a surface of the substrate; introducing a doping gas adjacent to the surface; generating a plasma in the doping gas for plasma implanting doping ions of a first conductivity type through the plurality of apertures into regions of the substrate disposed below the plurality of apertures until a first dopant dose is reached; and annealing the substrate with the doping ions disposed therein. - View Dependent Claims (14, 15, 26)
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10-13. -13. (canceled)
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16. A method for forming a selective emitter on a silicon solar cell including a substrate, the method comprising:
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forming a dielectric layer over a surface of the substrate, wherein the dielectric layer includes a first amount of a doping atom therein; providing an antireflective layer over the dielectric layer; forming apertures through the antireflective layer and the dielectric layer; introducing a doping gas adjacent the surface; generating a plasma in the doping gas for plasma implanting doping ions through the apertures and into the substrate; and annealing the substrate with the doping ions disposed therein. - View Dependent Claims (18, 19, 20, 21)
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17. (canceled)
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23. A method for forming a selective emitter on a silicon solar cell including a substrate, the method comprising:
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forming a dielectric layer over a surface of the substrate, wherein the dielectric layer comprises a doping ion; forming apertures in the dielectric layer; introducing a doping gas adjacent to the surface; generating a plasma in the doping gas to implant an amount of a doping ion through the apertures into regions of the substrate; and annealing the substrate with the doping ions disposed therein. - View Dependent Claims (24)
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Specification