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METHOD OF MAKING AN IMPROVED SELECTIVE EMITTER FOR SILICON SOLAR CELLS

  • US 20090142875A1
  • Filed: 11/30/2007
  • Published: 06/04/2009
  • Est. Priority Date: 11/30/2007
  • Status: Abandoned Application
First Claim
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1. A method of selectively doping predetermined regions of a surface of a crystalline silicon body comprising:

  • forming a passivation layer on the surface, wherein the passivation layer comprises a dielectric material and a first amount of a doping atom;

    patterning the passivation layer to define apertures therein;

    plasma implanting a second amount of a doping atom into the patterned structure passivation layer; and

    annealing the body.

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