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FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGIONS AND METHOD OF FABRICATION

  • US 20090142897A1
  • Filed: 12/23/2008
  • Published: 06/04/2009
  • Est. Priority Date: 02/23/2005
  • Status: Active Grant
First Claim
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1. A method of forming a transistor comprising:

  • forming a gate electrode on a gate dielectric layer formed on a silicon layer; and

    forming a pair of source/drain regions on opposite sides of said gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film.

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