METHOD FOR MANUFACTURING SOI SUBSTRATE

• US 20090142905A1
• Filed: 12/01/2008
• Published: 06/04/2009
• Est. Priority Date: 12/03/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei
• Granted Patent: US 8,211,780 B2
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: Y10S 438/928 Front and rear surface processing
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

Adhesion defects between a single crystal semiconductor layer and a support substrate are reduced to manufacture an SOI substrate achiving high bonding strength between the single crystal semiconductor layer and the support substrate. Plasma is produced by exciting a source gas, ion species contained in the plasma are added from one surface of a single crystal semiconductor substrate, and thereby forming a damage region in the single crystal semiconductor substrate; forming an insulating layer over one surface of the single crystal semiconductor substrate; a support substrate is bonded so as to face the single crystal semiconductor substrate with the insulating layer therebetween; the single crystal semiconductor substrate is heated to separate the single crystal semiconductor substrate into a single crystal semiconductor layer bonded to the support substrate and a single crystal semiconductor substrate, in the damage region; and the single crystal semiconductor layer bonded to the support substrate is pressed.

Claims

1. A method for manufacturing an SOI substrate, comprising the steps of:

adding ion species contained in plasma formed by exciting a source gas into a single crystal semiconductor substrate, thereby, forming a damage region in the single crystal semiconductor substrate;

forming an insulating layer over the single crystal semiconductor substrate after forming the damage region;

bonding a support substrate so as to face the single crystal semiconductor substrate with the insulating layer therebetween;

heating the single crystal semiconductor substrate and the support substrate to separate a part of the single crystal semiconductor substrate at the damage region, leaving a single crystal semiconductor layer over the support substrate; and

pressing the single crystal semiconductor layer bonded to the support substrate.

2. The method for manufacturing an SOI substrate according to claim 1, wherein the insulating layer is a silicon oxide film formed by chemical vapor deposition using an organosilane gas as a silicon source gas.

3. The method for manufacturing an SOI substrate according to claim 2, wherein the organosilane gas is a gas selected from the group consisting of ethyl silicate, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.

4. The method for manufacturing an SOI substrate according to claim 1, wherein a thickness of the insulating layer is 500 nm or more to 1000 nm or less.

5. The method for manufacturing an SOI substrate according to claim 1, wherein the addition of the ion species is performed using an ion doping apparatus.

6. The method for manufacturing an SOI substrate according to claim 1, wherein the ion species comprise H₃⁺.

7. A method for manufacturing an SOI substrate, comprising the steps of:

adding ion species contained in plasma formed by exciting a source gas into a single crystal semiconductor substrate, thereby, forming a damage region in the single crystal semiconductor substrate;

forming an insulating layer over the single crystal semiconductor substrate after forming the damage region;

bonding a support substrate so as to face the single crystal semiconductor substrate with the insulating layer therebetween;

heating the single crystal semiconductor substrate and the support substrate to separate a part of the single crystal semiconductor substrate at the damage region, leaving a single crystal semiconductor layer over the support substrate;

forming a plurality of island-shaped single crystal semiconductor layers by etching the single crystal semiconductor layer; and

pressing the plurality of island-shaped single crystal semiconductor layers.

8. The method for manufacturing an SOI substrate according to claim 7, wherein the insulating layer is a silicon oxide film formed by chemical vapor deposition using an organosilane gas as a silicon source gas.

9. The method for manufacturing an SOI substrate according to claim 8, wherein the organosilane gas is a gas selected from the group consisting of ethyl silicate, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.

10. The method for manufacturing an SOI substrate according to claim 7, wherein a thickness of the insulating layer is 500 nm or more to 1000 nm or less.

11. The method for manufacturing an SOI substrate according to claim 7,

wherein the addition of the ion species is performed using an ion doping apparatus.

12. The method for manufacturing an SOI substrate according to claim 7,

wherein the ion species comprise H₃⁺.

13. A method for manufacturing an SOI substrate, comprising the steps of:

adding ion species contained in plasma formed by exciting a source gas into a single crystal semiconductor substrate, thereby, forming a damage region in the single crystal semiconductor substrate;

forming an insulating layer over the single crystal semiconductor substrate after forming the damage region;

forming an opening which is deeper than the damage region in the insulating layer and the single crystal semiconductor substrate by etching the single crystal semiconductor substrate and the insulating layer;

bonding a support substrate so as to face the single crystal semiconductor substrate with the insulating layer therebetween;

heating the single crystal semiconductor substrate and the support substrate to separate a part of the single crystal semiconductor substrate at the damage region, leaving a plurality of single crystal semiconductor layers over the support substrate; and

pressing the plurality of single crystal semiconductor layers bonded to the support substrate.

14. The method for manufacturing an SOI substrate according to claim 13, wherein the insulating layer is a silicon oxide film formed by chemical vapor deposition using an organosilane gas as a silicon source gas.

15. The method for manufacturing an SOI substrate according to claim 14, wherein the organosilane gas is a gas selected from the group consisting of ethyl silicate, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.

16. The method for manufacturing an SOI substrate according to claim 13, wherein a thickness of the insulating layer is 500 nm or more to 1000 nm or less.

17. The method for manufacturing an SOI substrate according to claim 13,

wherein the addition of the ion species is performed using an ion doping apparatus.

18. The method for manufacturing an SOI substrate according to claim 13, wherein the ion species comprise H₃⁺.

19. A method for manufacturing an SOI substrate, comprising the steps of:

adding ion species contained in plasma formed by exciting a source gas into a single crystal semiconductor substrate, thereby, forming a damage region in the single crystal semiconductor substrate;

forming an insulating layer over the single crystal semiconductor substrate after forming the damage region;

bonding a support substrate so as to face the single crystal semiconductor substrate with the insulating layer therebetween;

heating the single crystal semiconductor substrate and the support substrate to separate a part of the single crystal semiconductor substrate at the damage region, leaving a single crystal semiconductor layer over the support substrate;

pressing the single crystal semiconductor layer bonded to the support substrate; and

irradiating the single crystal semiconductor layer with a laser beam.

20. The method for manufacturing an SOI substrate according to claim 19, wherein the insulating layer is a silicon oxide film formed by chemical vapor deposition using an organosilane gas as a silicon source gas.

21. The method for manufacturing an SOI substrate according to claim 20, wherein the organosilane gas is a gas selected from the group consisting of ethyl silicate, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.

22. The method for manufacturing an SOI substrate according to claim 19, wherein a thickness of the insulating layer is 500 nm or more to 1000 nm or less.

23. The method for manufacturing an SOI substrate according to claim 19,

wherein the addition of the ion species is performed using an ion doping apparatus.

24. The method for manufacturing an SOI substrate according to claim 19, wherein the ion species comprise H₃⁺.