Enhanced Process Yield Using a Hot-Spot Library

• US 20090144691A1
• Filed: 11/29/2007
• Published: 06/04/2009
• Est. Priority Date: 11/29/2007
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Rathsack, Benjamen M., Scheer, Steven, Nafus, Kathleen
• Granted Patent: US 7,673,278 B2
• Time in Patent Office: Days
• US Class Current: 716/56
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention provides apparatus and methods for processing substrates using a hot-spot library.

Claims

1. A method of creating data for a hot-spot library comprising:

obtaining a first layout for a first layer of a substrate using a first set of design rules, wherein the first layout is a test layout from a layout tool;

creating the test layout in a first masking layer on the substrate using a first reference processing sequence, wherein the first masking layer includes a photoresist layer, an anti-reflective coating (ARC) layer, or a bottom anti-reflective coating (BARC) layer, or any combination thereof;

selecting a first evaluation field in the first masking layer using first data associated with the first reference processing sequence or second data associated with the first set of design rules, or any combination thereof, wherein the first evaluation field in the first masking layer comprises a first hot-spot pattern that was created using the first reference processing sequence, wherein the first reference processing sequence and the first set of design rules have yield data associated therewith, the first reference processing sequence being performed with a first set of reference processing tools, or reference processing parameters, or any combination thereof;

obtaining evaluation data from the first evaluation field, wherein the first hot-spot pattern is measured in the first evaluation field, the evaluation data including one or more measured contrast images and at least one calculated Image Parameter (IP) value;

obtaining best estimate data in real-time from the hot-spot library, wherein the best estimate data includes one or more best estimate contrast images, or one or more best estimate IP values, or any combination thereof;

determining first differences between the evaluation data and the best estimate data;

comparing the first differences to one or more first hot-spot library creation limits;

updating the hot-spot library, when one or more of the first hot-spot library creation limits are met, wherein the first hot-spot pattern is identified and stored as a first member of the hot-spot library; and

performing a first corrective action when at least one of the first hot-spot library creation limits are not met.

2. The method of claim 1, wherein the performing the first corrective action comprises:

a) selecting a new evaluation field in the first masking layer using first data associated with the first reference processing sequence or second data associated with the first set of design rules, or any combination thereof, wherein the new evaluation field in the first masking layer comprises a new hot-spot pattern that was created using the first reference processing sequence, wherein the first reference processing sequence and the first set of design rules have yield data associated therewith, the first reference processing sequence being performed with the first set of reference processing tools, or the reference processing parameters, or any combination thereof;

b) obtaining new evaluation data from the new evaluation field, wherein the new hot-spot pattern is measured in the new evaluation field, the new evaluation data including one or more new measured contrast images and at least one new calculated IP value;

c) obtaining new best estimate data in real-time from the hot-spot library, wherein the new best estimate data includes one or more new best estimate contrast images, or one or more new best estimate IP values, or any combination thereof;

d) determining new differences between the new evaluation data and the new best estimate data;

e) comparing the new differences to one or more new hot-spot library creation limits;

f) updating the hot-spot library, when one or more of the new hot-spot library creation limits are met, wherein the new hot-spot pattern is identified and stored as a new member of the hot-spot library;

g) performing a new corrective action when one or more of the new hot-spot library creation limits are not met;

h) repeating steps a)-g), when new evaluation fields are available; and

i) storing the substrate, when new evaluation fields are not available.

3. The method of claim 1, wherein the performing the first corrective action comprises:

a1) creating the first layout in a new first masking layer on a new substrate using a new reference processing sequence, wherein the new reference processing sequence comprises new yield data and at least one new process parameter;

b1) selecting a new evaluation field in the new first masking layer on the new substrate using new first data associated with the new reference processing sequence or the second data associated with the first set of design rules, or any combination thereof, wherein the new evaluation field in the new masking layer comprises a new hot-spot pattern that was created using the new reference processing sequence, wherein the new reference processing sequence and the first set of design rules have yield data associated therewith, the new reference processing sequence being performed with a new set of reference processing tools, or new reference processing parameters, or any combination thereof;

c1) obtaining new evaluation data from the new evaluation field on the new substrate, wherein the new hot-spot pattern is measured in the new evaluation field, the new evaluation data including one or more new measured contrast images and at least one new calculated IP values;

d1) obtaining new best estimate data for the new substrate in real-time from the hot-spot library, wherein the new best estimate data includes one or more new best estimate contrast images, or one or more new best estimate IP values, or any combination thereof;

e1) determining new differences between the new evaluation data for the new substrate and the new best estimate data for the new substrate;

f1) comparing the new differences for the new substrate to one or more new hot-spot library creation limits;

g1) updating the hot-spot library, when one or more of the new hot-spot library creation limits are met, wherein one or more of the new hot-spot patterns are identified and stored as new members of the hot-spot library;

h1) performing a new corrective action when one or more of the new hot-spot library creation limits are not met;

i1) repeating steps a1)-h1), when new evaluation fields are available for the new substrate; and

j1) storing the new substrate, when new evaluation fields are not available.

4. The method of claim 1, wherein the performing the first corrective action comprises:

obtaining new best estimate data in real-time from the hot-spot library, wherein the new best estimate data includes one or more new best estimate contrast images, or one or more new best estimate IP values, or any combination thereof;

determining new differences between the evaluation data and the new best estimate data;

comparing the new differences to one or more new hot-spot library creation limits;

updating the hot-spot library, when one or more of the new hot-spot library creation limits are met, wherein one or more first hot-spot patterns are identified and stored as new members of the hot-spot library; and

performing a new corrective action when one or more of the new hot-spot library creation limits are not met.

5. The method of claim 1, wherein the performing the first corrective action comprises:

calculating simulation data in real-time using a simulation model, wherein the simulation data includes one or more simulated hot-spot patterns, one or more simulated contrast images, or one or more simulated IP values, or any combination thereof;

determining additional differences between the evaluation data and the simulation data;

comparing the additional differences to one or more additional hot-spot library creation limits;

updating the hot-spot library, when one or more of the additional hot-spot library creation limits are met, wherein one or more of the simulated hot-spot patterns are stored as new members of the hot-spot library; and

performing an additional corrective action when one or more of the additional hot-spot library creation limits are not met.

6. The method of claim 1, wherein the test layout is created in the masking layer using one or more lithography-related procedures and one or more scanner-related procedures, wherein the first hot-spot pattern is created by a defective lithography-related procedure, or a defective scanner-related procedure, or a combination thereof.

7. The method of claim 1, wherein the first hot-spot pattern comprises one or more resist bridges, one or more collapsed resist features, one or more watermarks, one or more layout-related defects, or one or more particles, or any combination thereof.

8. The method of claim 1, wherein obtaining evaluation data from the first evaluation field further comprises:

establishing a first beam using a first optical source, the first beam having a first incident angle;

illuminating the first hot-spot pattern in the first evaluation field using the first beam;

obtaining a first aerial image for the first hot-spot pattern;

determining a maximum IP value for the first hot-spot pattern;

determining a minimum IP value for the first hot-spot pattern;

determining a threshold IP value for the first hot-spot pattern;

determining a first best-fit curve using the maximum IP value, the minimum IP value, and the threshold IP value; and

identifying the first hot-spot pattern using the first best-fit curve.

9. A method of processing a substrate using a hot-spot library, the method comprising:

receiving the substrate, wherein the substrate comprises a patterned masking layer and a number of evaluation fields associated with the patterned masking layer, each evaluation field having contrast data associated therewith, the patterned masking layer being created using a first processing sequence and includes a photoresist layer, an anti-reflective coating (ARC) layer, or a bottom anti-reflective coating (BARC) layer, or any combination thereof;

selecting a first set of evaluation fields using first risk data associated with the first processing sequence, and second risk data associated with the substrate, wherein at least evaluation field on the substrate comprises a plurality of layout patterns that were created using a first set of design rules and a first reference processing sequence, wherein the first processing sequence and the first set of design rules have risk data associated therewith, the first processing sequence being performed with a first set of processing tools, or processing parameters, or any combination thereof;

obtaining evaluation data from the first set of evaluation fields, the evaluation data including one or more measured contrast images and at least one calculated Image Parameter (IP) value;

comparing the evaluation data to hot-spot library data;

identifying the substrate as a defective substrate when a matching condition is found; and

updating the first risk data and/or the second risk data when the matching condition is not found.

10. The method of claim 9, further comprising:

selecting a new set of evaluation fields on a new substrate using the first risk data associated with the first processing sequence, and new second risk data associated with the new substrate, wherein each new evaluation field on the new substrate comprises a plurality of new layout patterns that were created using the first set of design rules and the first reference processing sequence, wherein the first processing sequence and the first set of design rules have risk data associated therewith, the first processing sequence being performed with the first set of processing tools, or the processing parameters, or any combination thereof;

obtaining new evaluation data from the new set of evaluation fields, the new evaluation data including one or more new contrast images and at least one new IP value;

comparing the new evaluation data to the hot-spot library data;

identifying the new substrate as a new defective substrate when the matching condition is found; and

updating the first risk data and/or the second risk data for the new substrate when the matching condition is not found.

11. The method of claim 9, wherein obtaining evaluation data from the first set of evaluation fields further comprises:

measuring a first hot-spot pattern in a first evaluation field, the evaluation data including the one or more measured contrast images and the at least one calculated Image Parameter (IP) value;

establishing a first beam using a first optical source, the first beam having a first incident angle;

illuminating the first hot-spot pattern in the first evaluation field using the first beam;

obtaining a first aerial image for the first hot-spot pattern;

determining a maximum IP value for the first hot-spot pattern;

determining a minimum IP value for the first hot-spot pattern;

determining a threshold IP value for the first hot-spot pattern;

determining a first best-fit curve using the maximum IP value, the minimum IP value, and the threshold IP value; and

identifying the first hot-spot pattern using the first best-fit curve.

12. The method of claim 9, wherein a test layout is created in the masking layer using one or more lithography-related procedures and one or more scanner-related procedures, wherein a first hot-spot pattern is created by a defective lithography-related procedure, or a defective scanner-related procedure, or a combination thereof.

13. The method of claim 12, wherein the first hot-spot pattern comprises one or more resist bridges, one or more collapsed resist features, one or more watermarks, one or more layout-related defects, or one or more particles, or any combination thereof.

14. A method of creating data for hot-spot library comprising:

obtaining first layout data, wherein the first layout data comprises a test layout established for a first layer of a substrate and created by a first layout tool using a first set of design rules;

creating a simulated test layout using the first layout data, a masking layer model, and a simulated processing sequence, wherein the masking layer model includes a photoresist layer model, an anti-reflective coating (ARC) layer model, or a bottom anti-reflective coating (BARC) layer model, or any combination thereof;

selecting a first evaluation field in the simulated test layout using first risk data associated with the simulated processing sequence, second risk data associated with the first set of design rules, or third risk data associated with the masking layer model, or any combination thereof, wherein the first evaluation field in the simulated test layout comprises a first simulated test pattern that was created by the simulated processing sequence, wherein the simulated processing sequence and the first set of design rules have yield data associated therewith, the simulated processing sequence being performed with a first set of simulated processing tools, or simulated processing parameters, or any combination thereof;

obtaining simulated evaluation data from the first evaluation field in the simulated test layout, the simulated evaluation data including one or more simulated contrast images and at least one simulated Image Parameter (IP) value;

obtaining best estimate data in real-time from the hot-spot library, wherein the best estimate data includes one or more best estimate contrast images, or one or more best estimate IP values, or any combination thereof;

determining first differences between the simulated evaluation data and the best estimate data;

comparing the first differences to one or more first hot-spot library creation limits;

updating the hot-spot library, when one or more of the first hot-spot library creation limits are met, wherein one or more of the simulated test patterns are identified as process hot-spot patterns and are stored in the hot-spot library; and

performing a first corrective action when at least one of the first hot-spot library creation limits are not met.

15. The method of claim 14, wherein the performing the first corrective action comprises:

a) selecting a new evaluation field in the simulated test layout using new first risk data associated with the simulated processing sequence, new second risk data associated with the first set of design rules, or new third risk data associated with the masking layer model, or any combination thereof, wherein the new evaluation field in the simulated test layout comprises a new simulated test pattern that was created by the simulated processing sequence, wherein the simulated processing sequence and the first set of design rules have yield data associated therewith, the simulated processing sequence being performed with the first set of simulated processing tools, or the simulated processing parameters, or any combination thereof;

b) obtaining new simulated evaluation data from the first evaluation field in the simulated test layout, the new simulated evaluation data including one or more new simulated contrast images and at least one new simulated IP value;

c) obtaining new best estimate data in real-time from the hot-spot library, wherein the new best estimate data includes one or more new best estimate contrast images, or one or more new best estimate IP values, or any combination thereof;

d) determining new differences between the new simulated evaluation data and the new best estimate data;

e) comparing the new differences to one or more new hot-spot library creation limits;

f) updating the hot-spot library, when one or more hot-spot library creation limits are met, wherein one or more of the new simulated test patterns are identified as new process hot-spot patterns and are stored in the hot-spot library; and

g) performing a new corrective action when one or more of the new hot-spot library creation limits are not met;

h) repeating steps a)-g), when new evaluation fields are available in the simulated test layout; and

i) storing the substrate, when new evaluation fields are not available in the simulated test layout.

16. The method of claim 14, wherein the performing the first corrective action comprises:

obtaining new layout data, wherein the new layout data comprises a new test layout established for a new first layer of a new substrate and created by the first layout tool using the first set of design rules;

creating a new simulated test layout using the new layout data, a new masking layer model, and a new simulated processing sequence, wherein the new masking layer model includes a new photoresist layer model, a new anti-reflective coating (ARC) layer model, or a new bottom anti-reflective coating (BARC) layer model, or any combination thereof;

selecting a new evaluation field in the new simulated test layout for the new substrate using new first risk data associated with the new simulated processing sequence, second risk data associated with the first set of design rules, or new third risk data associated with the new masking layer model, or any combination thereof, wherein the new evaluation field in the new simulated test layout comprises a new simulated test pattern that was created by the new simulated processing sequence, wherein the new simulated processing sequence has new risk data associated therewith, the new simulated processing sequence being performed with a new set of simulated processing tools, or new simulated processing parameters, or any combination thereof;

obtaining new simulated evaluation data for the new substrate using the new evaluation field in the new simulated test layout, the new simulated evaluation data including one or more new simulated contrast images and at least one new simulated IP value;

obtaining new best estimate data in real-time for the new substrate from the hot-spot library, wherein the new best estimate data includes one or more new best estimate contrast images, or one or more new best estimate IP values, or any combination thereof;

determining new differences for the new substrate using the new simulated evaluation data and the new best estimate data;

comparing the new differences to one or more new hot-spot library creation limits;

updating the hot-spot library, when one or more new hot-spot library creation limits are met, wherein one or more of the new simulated test patterns are identified as process hot-spot patterns and are stored in the hot-spot library; and

performing a new corrective action when one or more of the new hot-spot library creation limits are not met.

17. The method of claim 14, wherein obtaining simulated evaluation data from the first evaluation field further comprises:

simulating a first beam using a simulated optical source, the simulated first beam having a first incident angle;

illuminating a first hot-spot pattern in the first evaluation field using the simulated first beam;

obtaining a first simulated aerial image for the first hot-spot pattern;

determining a simulated maximum IP value for the first hot-spot pattern;

determining a simulated minimum IP value for the first hot-spot pattern;

determining a simulated threshold IP value for the first hot-spot pattern;

determining a first simulated best-fit curve using the simulated maximum IP value, the simulated minimum IP value, and the simulated threshold IP value; and

identifying the first hot-spot pattern using the first simulated best-fit curve.

18. A method of processing a substrate using a hot-spot library, the method comprising:

receiving the substrate, wherein the substrate comprises a patterned masking layer and a number of evaluation fields associated with the patterned masking layer, each evaluation field having contrast data associated therewith, the patterned masking layer being created using a first processing sequence and includes a photoresist layer, an anti-reflective coating (ARC) layer, or a bottom anti-reflective coating (BARC) layer, or any combination thereof;

selecting a first set of evaluation fields using first risk data associated with the first processing sequence, and second risk data associated with the substrate, wherein at least evaluation field on the substrate comprises a plurality of layout patterns that were created using a first set of design rules and the first processing sequence, wherein the first processing sequence and the first set of design rules have risk data associated therewith, the first processing sequence being performed with a first set of processing tools, or processing parameters, or any combination thereof;

obtaining evaluation data from the first set of evaluation fields, the evaluation data including one or more measured contrast images and at least one calculated Image Parameter (IP) value;

calculating simulation data for the first set of evaluation fields, the simulation data including at least one simulated contrast image and one or more simulated IP values;

comparing the evaluation data to the simulation data;

identifying the substrate as a defective substrate when a matching condition is found; and

updating the first risk data and/or the second risk data when the matching condition is not found.

19. The method of claim 18, further comprising:

calculating new simulation data for the first set of evaluation fields when the matching condition is not found, the new simulation data including at least one new simulated contrast image and one or more new simulated IP values;

comparing the evaluation data to the new simulation data;

identifying the substrate as a new defective substrate when a new matching condition is found; and

updating the first risk data and/or the second risk data when the new matching condition is not found.

20. A method of processing a substrate using a hot-spot library, the method comprising:

obtaining layout data for one or more layers of the substrate, the layout data being obtained from a layout tool and including a test layout created using a first set of design rules;

selecting a first simulated processing sequence for creating a first simulated layout in a first layer of the substrate; and

determining yield data for the first simulated layout using the layout data, simulated layout data, first simulated processing sequence data, and hot-spot library data, wherein the hot-spot library comprises a plurality of hot-spot structures and associated data, each hot-spot structure having yield data, contrast image data, and simulated Image Parameter (IP) data associated therewith.