Photovoltaic Device with Solution-processed Chalcogenide Absorber Layer
First Claim
1. A photovoltaic device comprising:
- a substrate; and
an absorber layer disposed on said substrate;
wherein said absorber layer comprises a doped or undoped composition represented by the formula;
Cu1-yIn1-xGaxSe2-zSz wherein 0≦
x≦
1;
≦
y≦
0.15; and
0≦
z≦
2,wherein said absorber layer is formed by a solution-based deposition process comprising the steps of;
contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution;
coating said solution on said substrate to produce a coated substrate; and
heating said coated substrate to produce said photovoltaic device.
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Abstract
The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0≦x≦1; 0≦y≦0.15 and 0≦z≦2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.
89 Citations
28 Claims
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1. A photovoltaic device comprising:
-
a substrate; and an absorber layer disposed on said substrate; wherein said absorber layer comprises a doped or undoped composition represented by the formula;
Cu1-yIn1-xGaxSe2-zSzwherein 0≦
x≦
1;≦
y≦
0.15; and0≦
z≦
2,wherein said absorber layer is formed by a solution-based deposition process comprising the steps of; contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating said solution on said substrate to produce a coated substrate; and heating said coated substrate to produce said photovoltaic device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A photovoltaic device comprising:
-
a substrate; and an absorber layer disposed on said substrate; wherein said absorber layer comprises a doped or undoped composition represented by the formula;
Cu1-yIn1-xGaxSe2-zSzwherein 0≦
x≦
1;0≦
y≦
0.15; and0≦
z≦
2wherein said absorber layer is formed by a solution-based deposition process comprising the steps of; contacting a hydrazinium-based chalcogenide precursor and a solvent, under conditions sufficient to produce a homogeneous solution; coating said solution on said substrate to produce a coated substrate; and heating said coated substrate to produce said photovoltaic device. - View Dependent Claims (19, 20, 21)
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22. A solution-based deposition process for depositing an absorber layer on a substrate wherein said absorber layer comprises a doped or undoped composition represented by the formula:
-
wherein 0≦
x≦
1; and0≦
y≦
0.15; and0≦
z≦
2said process comprising the steps of; contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating said solution on said substrate to produce a coated substrate; and heating said coated substrate to produce said absorber layer. - View Dependent Claims (23, 24)
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25. A solution-based deposition process for depositing an absorber layer on a substrate wherein said absorber layer comprises a doped or undoped composition represented by the formula:
-
Cu1-yIn1-xGaxSe2-zSzwherein 0≦
x≦
1;0≦
y≦
0.15; and0≦
z≦
2said process comprising the steps of; contacting a hydrazinium-based chalcogenide precursor and a solvent, under conditions sufficient to produce a homogeneous solution; coating said solution on said substrate to produce a coated substrate; and heating said coated substrate to produce said absorber layer. - View Dependent Claims (26, 27, 28)
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Specification