ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME
First Claim
Patent Images
1. An electrical device using a phase-change material comprising:
- a first reactant layer;
a second reactant layer formed on the first reactant layer; and
a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer.
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Abstract
Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
14 Citations
20 Claims
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1. An electrical device using a phase-change material comprising:
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a first reactant layer; a second reactant layer formed on the first reactant layer; and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. - View Dependent Claims (2, 3, 4)
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5. A phase-change memory device comprising:
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a first reactant layer; an insulating layer covering the first reactant layer having a contact hole formed therein partially exposing a top surface of the first reactant layer; and a second reactant layer filling the contact hole, wherein a phase-change layer is formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. - View Dependent Claims (6, 7, 8)
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9. A method of fabricating a phase-change electrical device comprising:
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forming a first reactant layer on a substrate; forming a second reactant layer on the first reactant layer; and causing a solid-state reaction of a material forming the first reactant layer with a material forming the second reactant layer to form a phase-change layer between the first and second reactant layers. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A phase-change memory device comprising:
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an insulating layer formed on a lower electrode, and having a contact hole partially exposing the lower electrode; a first reactant layer filling the contact hole; a second reactant layer formed on the first reactant layer; and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. - View Dependent Claims (18, 19, 20)
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Specification