HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING
First Claim
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1. A method for fabricating a III-nitride light emitting diode (LED), comprising:
- texturing at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED to form a textured surface, wherein the texturing step is performed by plasma assisted chemical etching.
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Abstract
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
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Citations
9 Claims
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1. A method for fabricating a III-nitride light emitting diode (LED), comprising:
texturing at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED to form a textured surface, wherein the texturing step is performed by plasma assisted chemical etching. - View Dependent Claims (2, 3, 4, 5)
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6. A method for emitting light from a III-nitride light emitting diode (LED), comprising:
emitting the light from at least one textured surface of a semipolar or nonpolar plane of a III-nitride layer of the LED, wherein the texturing is performed by plasma assisted chemical etching.
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7. A III-nitride light emitting diode (LED), comprising:
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(a) n-type III-nitride; (b) p-type III-nitride; (c) a III-nitride active layer, that emits light, formed between the n-type III-nitride and p-type III-nitride; (d) a III-nitride light extraction surface on the n-type III-nitride and forming an interface with an external medium, wherein the III-nitride light extraction surface has features with at least one sloped sidewall which transmits the light into external medium air at the interface and reflects the light at the interface, wherein; (1) the reflected light, after undergoing subsequent reflections inside the features, has an increased incidence angle relative to the interface and consequently an increased chance of being transmitted to the external medium, and (2) the n-type III-nitride, p-type III-nitride, and III-nitride active layer are semi-polar or non-polar layers. - View Dependent Claims (8, 9)
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Specification