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Microminiature moving device

  • US 20090146228A1
  • Filed: 12/01/2008
  • Published: 06/11/2009
  • Est. Priority Date: 03/03/2004
  • Status: Active Grant
First Claim
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1. A microminiature moving device comprising:

  • stationary parts formed of a single-crystal silicon layer of a silicon-on-insulator (SOI) wafer that comprises a single-crystal silicon substrate, an insulating layer on a surface of the single-crystal silicon substrate, and the single-crystal silicon layer on a surface of the insulating layer and fixed to stationary part fixing areas of the surface of said single-crystal silicon substrate by the insulating layer sandwiched therebetween, so that those surface areas except the stationary part fixing areas of the surface of the single-crystal silicon substrate are exposed;

    movable elements formed of the single-crystal silicon layer of the silicon-on-insulator wafer having at least one end connected to a stationary part so as to be moveable in parallel to the surface of the single-crystal silicon substrate; and

    depressions in all the exposed surface areas of the single-crystal silicon substrate, wherein;

    the depressions have edges at boundaries of the depressions at the surface of the single-crystal silicon substrate and have a depth greater than the insulating layer thickness;

    said movable elements are above said depressions;

    the stationary parts have overhanging portions of its surface facing the substrate that overhang the depressions; and

    the insulating layer sandwiched between the stationary parts and the single-crystal silicon substrate has edges that are indented from the overhanging portions of the stationary parts and from the edges of the depressions.

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