MICROELECTRONIC IMAGING UNITS HAVING AN INFRARED-ABSORBING LAYER AND ASSOCIATED SYSTEMS AND METHODS

• US 20090146234A1
• Filed: 12/06/2007
• Published: 06/11/2009
• Est. Priority Date: 12/06/2007
• Status: Abandoned Application

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Micron Technology, Inc.
• Inventors: Jiang, Tongbi, Brooks, J. Michael, Luo, Shijian
• Application Number:
  US11/951,528
• Publication Number:
  US 20090146234A1
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA

Abstract

Infrared (IR) absorbing layers and microelectronic imaging units that employ such layers are disclosed herein. In one embodiment, a method of manufacturing a microelectronic imaging unit includes attaching an IR-absorbing lamina having a filler material to a backside die surface of an imager workpiece. An individual imaging die is singulated from the workpiece such that a section of the infrared-absorbing lamina remains attached to the individual imaging die. The individual imaging die is coupled to an interposer substrate with a portion of the IR-absorbing lamina positioned therebetween. In another embodiment, the IR-absorbing lamina is a die attach film and the filler material is carbon black.

Claims

1. A method of manufacturing a microelectronic imaging unit, the method comprising:

attaching an infrared-absorbing lamina to a backside die surface of an imager workpiece having at least one imaging die, the infrared-absorbing lamina including an infrared-absorbing material that absorbs electromagnetic radiation in the near-infrared frequency spectra;

singulating from the imager workpiece the imaging die and a section of the infrared-absorbing lamina attached to the imaging die; and

coupling the backside die surface to an interposer substrate, wherein at least a portion of the infrared-absorbing lamina is positioned between the interposer substrate and the imaging die.

2. The method of claim 1 wherein the infrared-absorbing lamina comprises a die attach film having a base film and an adhesive layer, and wherein attaching the infrared-absorbing lamina comprises:

pressing the adhesive layer against the backside die surface, wherein at least the adhesive layer includes the infrared-absorbing material; and

removing the base film from the adhesive layer, wherein the adhesive layer remains coupled to the backside die surface.

3. The method of claim 2 wherein coupling the backside die surface to the interposer substrate comprises attaching the adhesive layer to the interposer substrate.

4. The method of claim 1 wherein the infrared-absorbing lamina comprises a non-flowable polymeric film containing the infrared-absorbing material, and wherein attaching the infrared-absorbing lamina comprises:

positioning the polymeric film at the backside die surface; and

curing the polymeric film.

5. The method of claim 4 wherein coupling the backside die surface to the interposer substrate includes using at least one of a die attach film and a die attach paste to couple the polymeric film to the interposer substrate.

6. The method of claim 1 wherein the infrared-absorbing material includes at least one of carbon black, aluminum trihydroxide, aluminum borate, calcium borate, calcium carbonate, lanthanum borite, and indium tin oxide.

7. The method of claim 1 wherein the infrared-absorbing lamina comprises at least 0.05% carbon black by volume.

8. A method for manufacturing a microelectronic imaging unit, the method comprising:

aligning a lamina comprising a pre-formed polymeric film and an infrared-absorbing material with an imaging die;

covering a backside surface of the imaging die with the pre-formed polymeric film; and

attaching an interposer substrate to at least a portion of the pre-formed polymeric film at the backside surface of the imaging die.

9. The method of claim 8, further comprising forming a package that is attached to the interposer substrate and houses the imaging die, the package including at least one of a transparent lid and lens that is positioned over at least a portion of the imaging die.

10. The method of claim 8, further comprising:

coupling electrical contacts of the imaging die to electrical contacts at a first side of the interposer substrate; and

removing a portion of the continuous film that corresponds with a bonding location at an individual electrical contact of the interposer substrate.

11. The method of claim 11 wherein coupling the electrical contacts of the imaging die is carried out by at least one of a wire bonding process and a bump bonding process.

12. A method for inhibiting the transmission of electromagnetic radiation between an interposer substrate and a microelectronic die, the method comprising:

coupling a microelectronic die to an interposer substrate; and

positioning an infrared-absorbing lamina between the microelectronic die and the interposer substrate carrying the microelectronic die, the infrared-absorbing lamina including a material that absorbs infrared light, and the interposer substrate including a region adjacent to the infrared-absorbing lamina that is generally transparent to the infrared light.

13. The method of claim 12 wherein the infrared-absorbing lamina comprises an adhesive and the material that absorbs infrared radiation is a filler material in the adhesive.

14. The method of claim 13 wherein the filler material includes at least one of carbon black, aluminum trihydroxide, aluminum borate, calcium borate, calcium carbonate, lanthanum borite, and indium tin oxide.

15. The method of claim 12 wherein the infrared-absorbing lamina is a continuous film composed of a non-viscous polymeric material.

16. A microelectronic imaging unit, comprising:

a microelectronic imaging die including a backside die surface;

an infrared-absorbing lamina attached to at least a portion of the backside die surface, the infrared-absorbing lamina including a material that filters out infrared radiation; and

an interposer substrate coupled to the imaging die, wherein the infrared-absorbing lamina is between the backside die surface and the interposer substrate.

17. The imaging device of claim 16 wherein the infrared-absorbing lamina comprises an adhesive layer associated with a die attach film.

18. The imaging device of claim 16 wherein the infrared-absorbing lamina comprises a polymer based sheet.

19. The imaging device of claim 16 wherein the infrared-absorbing lamina is positioned to cover a non metalized region of the interposer substrate.

20. The imaging device of claim 16 wherein the infrared-absorbing lamina is positioned to inhibit electromagnetic radiation from reflecting into the backside die surface.

21. An infrared imaging system, comprising:

a support substrate;

a microelectronic imaging unit electrically coupled to the support substrate and including an imaging die having an image sensor;

at least one infrared light-emitting diode coupled to the support substrate and configured to output infrared light; and

a radiation-absorbing element between the backside surface of the imaging die and the support substrate, wherein the radiation absorbing element is not transmissive to infrared radiation.

22. The infrared imaging system of claim 21, further comprising at least one of a package and a lens assembly, the package and/or lens assembly housing the imaging die and including a lens that is positioned over the image sensor.

23. The infrared imaging system of claim 21 wherein the radiation-absorbing element is positioned to inhibit at least a portion of the infrared light that is transmitted towards the imaging die and through the support substrate.

24. The infrared imaging system of claim 21 wherein the radiation-absorbing element comprises a non-flowable polymeric film and/or an adhesive layer associated with a die attach film.

25. The infrared imaging system of claim 21 wherein the radiation-absorbing element comprises at least a 0.05% volumetric concentration of carbon black.