METHOD FOR TESTING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE TESTING SYSTEM

• US 20090147255A1
• Filed: 12/07/2007
• Published: 06/11/2009
• Est. Priority Date: 12/07/2007
• Status: Abandoned Application

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Dickson, Kristofor J., Erington, Kent B.
• Application Number:
  US11/952,210
• Publication Number:
  US 20090147255A1
• Time in Patent Office: Days
• US Class Current: 356/318
• CPC Class Codes: G01R 31/311 of integrated circuits G01R31/31728 takes precedence

Abstract

A method for testing a semiconductor device includes irradiating a transistor within the semiconductor device with a light beam, where the irradiating the transistor induces a current within the transistor, and, in response to the irradiating, detecting photon emission from the transistor. A semiconductor device testing system includes a light beam emitter which provides a light beam to a device under test (DUT) to induce a current in the DUT, a filter which receives a photon emission from the DUT and removes from the photon emission a reflected light beam that is reflected from the DUT to provide a filtered photon emission, and a photon detector which detects the filtered photon emission.

Claims

1. A method for testing a semiconductor device, the method comprising:

irradiating a transistor within the semiconductor device with a light beam, wherein the irradiating the transistor induces a current within the transistor; and

in response to the irradiating, detecting photon emission from the transistor.

2. The method of claim 1, wherein the irradiating the transistor and the detecting the photon emission is performed concurrently.

3. The method of claim 1, wherein the detecting the photon emission is performed after the irradiating the transistor is stopped.

4. The method of claim 1, wherein the detecting the photon emission is performed to indicate presence of a saturation current in the transistor and to detect a leakage current in the transistor due to the light beam.

5. The method of claim 4, wherein the detecting the photon emission comprises detecting a state change of a drain of the transistor.

6. The method of claim 1, wherein the light beam has a wavelength having an energy that is greater than or equal to a band gap of a semiconductor material of the transistor.

7. The method of claim 1, further comprising:

providing one or more test vectors to the semiconductor device, wherein the providing irradiating and the detecting is performed at least partially concurrently with the providing the one or more test vectors.

8. The method of claim 1, further comprising:

in response to the irradiating and prior to the detecting the photon emission, filtering the photon emission to remove a reflected light beam that is reflected from the semiconductor device.

10. The method of claim 1, wherein during each iteration of the executing the plurality of test vectors, the method further comprises:

in response to the irradiating and prior to the detecting the photon emission, filtering the photon emission to remove a reflected light beam that is reflected from the semiconductor device.

21. The method of claim 7, further comprising:

accumulating a photon count from the detected photon emission.

22. The method of claim 21 wherein after the providing one or more test vectors, using the accumulated photon count to detect a stage change of a drain of the transistor.

23. The method of claim 7, wherein the providing one or more test vectors is performed at a speed of greater than one megahertz.

24. The method of claim 7, wherein the providing one or more test vectors comprises iteratively executing a plurality of test vectors wherein during each iteration, the irridating the transistor and the detecting the photon emission occurs.

25. The method of claim 24, where each iteration further comprises accumulating a photon count from the detected protein emission.

9. A method for testing a semiconductor device, the method comprising:

iteratively executing a plurality of test vectors on the semiconductor device, wherein during each iteration of the executing the plurality of test vectors, the method further comprises;

irradiating a transistor within the semiconductor device with a light beam,

wherein the irradiating the transistor induces a current within the transistor;

detecting photon emission from the transistor; and

accumulating a photon count from the detected photon emission.

11. The method of claim 9, wherein after the iteratively executing the plurality of test vectors, using the accumulated photon count to detect a state change of a drain of the transistor.

12. The method of claim 9, wherein the detecting the photon emission is performed to indicate presence of a saturation current in the transistor and to detect a leakage current in the transistor caused by the light beam.

13. The method of claim 9, wherein the light beam has a wavelength having an energy that is greater than or equal to a band gap of a semiconductor material of the transistor.

14. The method of claim 9, wherein the executing the plurality of test vectors is performed at a speed of greater than one megahertz.

15-20. -20. (canceled)