CALIBRATION OF TEMPERATURE CONTROL SYSTEM FOR SEMICONDUCTOR PROCESSING CHAMBER

• US 20090147819A1
• Filed: 11/18/2008
• Published: 06/11/2009
• Est. Priority Date: 12/07/2007
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: HILL, ERIC, GIVENS, MICHAEL, HAWKINS, MARK, GOODMAN, MATTHEW G., BARTLETT, GREGORY, AGGARWAL, RAVINDER
• Granted Patent: US 8,047,706 B2
• Time in Patent Office: Days
• US Class Current: 374/1
• CPC Class Codes: G01K 15/00 Testing or calibrating of thermometers

Abstract

Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.

Claims

1. A method of calibrating a temperature control system, comprising:

providing a heating apparatus configured to heat a semiconductor processing chamber;

providing a temperature sensor configured to generate a signal indicative of a temperature within the processing chamber;

providing a temperature control system configured to control the heating apparatus based on the signal from the temperature sensor;

varying a thickness of a layer of material in the processing chamber;

measuring, while varying the layer thickness, a variation of a property of the layer having a cyclical variation as a thickness of the layer varies;

measuring a cycle time period of the cyclical variation of the property; and

adjusting the temperature control system based on the measured cycle time period.

2. The method of claim 1, wherein varying the layer thickness comprises depositing the layer of material onto a surface in the processing chamber by a vapor deposition process, the method further comprising:

instructing the temperature control system to bring the processing chamber to a setpoint temperature during the depositing step; and

allowing the measured property to vary cyclically for one or more cycles of its variation while depositing the layer of material;

wherein determining the cycle time period comprises determining a time period of one or more of said one or more cycles of the variation of the measured property, and wherein adjusting the temperature control system comprises responding to a difference between the measured cycle time period and an expected time period associated with the setpoint temperature by applying or adjusting an offset value for a PID controller associated with the temperature sensor.

3. The method of claim 2, further comprising, prior to said depositing step, determining said expected time period by:

bringing the processing chamber to the setpoint temperature;

depositing a baseline layer of the material onto a surface inside the processing chamber by a vapor deposition process;

measuring, while depositing the baseline later of material, a variation of said property of the baseline layer;

allowing the measured property to vary cyclically for one or more cycles of its variation while depositing the baseline layer of material;

determining a time period of one or more of said one or more cycles of the variation of the measured property of the baseline layer; and

setting the expected time period equal to the determined time period of said one or more cycles of the variation of the measured property of the baseline layer.

4. The method of claim 2, wherein allowing the measured property to vary cyclically for one or more cycles of its variation comprises allowing the measured property to vary cyclically for a plurality of cycles of its variation.

5. The method of claim 1, wherein the property comprises a color of the deposited layer.

6. The method of claim 1, wherein the property comprises an emissivity of the deposited layer.

7. The method of claim 6, wherein measuring the variation of the emissivity comprises using an optical pyrometer.

8. The method of claim 1, wherein adjusting the temperature control system comprises automatically adjusting the temperature control system.

9. The method of claim 1, wherein adjusting the temperature control system comprises applying or adjusting an offset value for a PID controller associated with the temperature sensor.

10. The method of claim 1, wherein varying the layer thickness comprises depositing the layer of material onto a semiconductor wafer.

11. The method of claim 1, wherein varying the layer thickness comprises depositing the layer of material onto a surface of a susceptor.

12. The method of claim 1, wherein:

providing a temperature sensor comprises providing a plurality of temperature sensors each configured to generate a signal indicative of a temperature within the processing chamber;

the temperature control system is configured to control the heating apparatus based on two or more of the signals from the temperature sensors; and

adjusting the temperature control system comprises applying or adjusting offset values for PID controllers associated with two or more of the temperature sensors.

13. The method of claim 1, wherein determining said cycle time period comprises determining a time gap between two peaks or two troughs in said measured variation of the property.

14. A method of calibrating a temperature control system, comprising:

providing a heating apparatus configured to heat a semiconductor processing chamber;

providing a temperature sensor configured to generate a signal indicative of a temperature within the processing chamber;

providing a temperature control system configured to control the heating apparatus based on the signal from the temperature sensor;

varying a thickness of a layer of material in the processing chamber;

measuring, while varying the layer thickness, a variation of a property of the layer having a cyclical variation as the layer thickness varies;

after the measured variation of the property reaches at least one peak and at least one trough, determining a process duration beginning at a first point in the measured variation and ending at a second point in the measured variation;

determining a difference between the process duration and an expected duration; and

adjusting the temperature control system based on the difference.

15. The method of claim 14, wherein varying the layer thickness comprises depositing the layer onto a surface in the processing chamber by a vapor deposition process, the method further comprising instructing the temperature control system to bring the processing chamber to a setpoint temperature during the depositing step, the expected duration being based on the setpoint temperature, wherein adjusting the temperature control system comprises responding to the difference between the process duration and the expected duration by applying or adjusting an offset value for a PID controller associated with the temperature sensor.

16. The method of claim 15, wherein the first and second points each comprise one of a peak and a trough in the measured variation of the property, the measured variation including a specific total number of peaks and troughs between said first and second points, the method further comprising, prior to said depositing step, determining said expected duration by:

bringing the processing chamber to the setpoint temperature;

depositing a baseline layer of the material onto a surface inside the processing chamber by a vapor deposition process;

measuring, while depositing the baseline layer of material, a variation of said property of the baseline layer;

allowing the measured property of the baseline layer to reach a first point and a second point, each of the first and second points of the measured property of the baseline layer comprising one of a peak and a trough, a total number of peaks and troughs between the first and second points of the measured property of the baseline layer being equal to said specific number;

determining a baseline process duration beginning at the first point in the measured variation of the property of the baseline layer and ending at the second point in the measured variation of the property of the baseline layer; and

setting the baseline process duration equal to the expected duration.

17. The method of claim 14, wherein the first and second points each comprise one of a peak and a trough in the measured variation of the property.

18. An apparatus for semiconductor processing, comprising:

a semiconductor processing chamber;

a heating apparatus configured to heat the processing chamber;

a temperature sensor configured to generate a signal indicative of a temperature within the processing chamber;

a temperature control system configured to control the heating apparatus based on the signal from the temperature sensor;

a cyclical property sensor for measuring a property of a layer of a material in the chamber, the property having a cyclical variation as a thickness of the layer varies; and

a calibration system configured to determine a cycle time period of a cyclical variation of the property of a layer of material in the chamber as measured by the cyclical property sensor while a thickness of the layer is varied, the calibration system configured to adjust the temperature control system based on the determined cycle time period.

19. The apparatus of claim 18, wherein the calibration system is configured to determine the cycle time period of a cyclical variation of the property of a layer that is measured while the layer is deposited by a vapor deposition process.

20. The apparatus of claim 19, wherein the calibration system is configured to determine the cycle time period for a variation of the property that is measured while the temperature control system targets a setpoint temperature inside the chamber, the calibration system configured to compare the determined cycle time period with an expected cycle time period associated with the setpoint temperature, the calibration system configured to respond to a difference between the determined time period and the expected time period by automatically adjusting or applying an offset for a PID controller associated with the temperature sensor.

21. The apparatus of claim 18, wherein the property comprises a color of the deposited layer.

22. The apparatus of claim 18, wherein the property comprises an emissivity of the deposited layer.

23. The apparatus of claim 18, wherein the cyclical property sensor comprises an optical pyrometer.

24. The apparatus of claim 18, wherein the calibration system is configured to determine a cycle time period extending over a plurality of cyclical variations of the measured property.

25. The apparatus of claim 18, further comprising a plurality of temperature sensors each configured to generate a signal indicative of a temperature within the processing chamber, wherein the temperature control system is configured to control the heating apparatus based on two or more of the signals from the temperature sensors, the calibration system being configured to adjust the temperature control system by applying or adjusting offset values for PID controllers associated with two or more of the temperature sensors.

26. An apparatus for semiconductor processing, comprising:

a semiconductor processing chamber;

a heating apparatus configured to heat the processing chamber;

a temperature sensor configured to generate a signal indicative of a temperature within the processing chamber;

a temperature control system configured to control the heating apparatus based on the signal from the temperature sensor;

a cyclical property sensor for measuring a property of a layer of a material in the chamber, the property having a cyclical variation as a thickness of the layer varies; and

a calibration system configured to determine, after the cyclical property sensor measures a variation of the property of a layer in the chamber and the measured variation reaches at least one peak and at least one trough, a process duration beginning at a first point in the measured variation and ending at a second point in the measured variation, the calibration system configured to determine a difference between the process duration and an expected duration, the calibration system configured to adjust the temperature control system based on the determined difference.

27. The apparatus of claim 26, wherein the calibration system is configured to determine the process duration after the cyclical property sensor measures the variation of the property of the layer during a vapor deposition process of the layer, the calibration system configured to determine the process duration for a variation of the property that is measured while the temperature control system targets a setpoint temperature inside the chamber during the vapor deposition process, the expected duration being associated with the setpoint temperature, the calibration system configured to respond to a difference between the process duration and the expected duration by automatically adjusting or applying an offset for a PID controller associated with the temperature sensor.

28. The apparatus of claim 26, wherein the first and second points each comprise one of a peak and a trough in the measured variation of the property.