Method of Manufacturing Compound Semiconductor Devices

• US 20090148982A1
• Filed: 01/21/2009
• Published: 06/11/2009
• Est. Priority Date: 03/09/2005
• Status: Abandoned Application

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: Postech Foundation, Siltron Inc. (SK Inc.)
• Inventors: Lee, Dong-Kun, Yi, Gyu-Chul, Kim, Yong-Jin, An, Sung-Jin
• Application Number:
  US12/357,205
• Publication Number:
  US 20090148982A1
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer

Abstract

A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor thin film on the substrate on which the spherical balls are coated. The entire process can be simplified and a high-quality compound semiconductor thin film can be grown in a short amount of time in comparison to an epitaxial lateral overgrowth (ELO) method.

Claims

1. A method of manufacturing a compound semiconductor device, comprising:

forming a plurality of spherical balls;

coating the spherical balls onto a substrate;

growing a buffer layer on the substrate on which the spherical balls are coated;

selectively growing a compound semiconductor thin film between the spherical balls;

growing the compound semiconductor thin film in a lateral direction so that it grows on the spherical balls; and

continuously growing the compound semiconductor thin film to a desired thickness.

2. The method according to claim 1, further comprising:

after continuously growing the compound semiconductor thin film to the desired thickness,

forming a plurality of spherical balls;

coating the spherical balls onto the compound semiconductor thin film;

selectively growing another compound semiconductor thin film on the compound semiconductor thin film on which the spherical balls are coated and between the spherical balls; and

growing for the compound semiconductor thin film in a lateral direction and on the spherical balls.

4. The method according to claim 1, wherein each of the spherical balls has a diameter in the range of from about 10 nm to about 2 μ

m.

5. The method according to claim 1, wherein the spherical balls are formed of a material selected from the group consisting of SiO₂, Al₂O₃, TiO₂, ZrO₂, Y₂O₃—

ZrO₂, CuO, Cu₂O, Ta₂O₅, PZT(Pb(Zr, Ti)O₃), Nb₂O₅, FeSO₄, Fe₃O₄, Fe₂O₃, Na₂SO₄, GeO₂, CdS, and a metal.

6. The method according to claim 1, wherein the forming of the spherical balls comprises:

making a first solution by dissolving tetraethylorthosilicate (TEOS) in anhydrous ethanol;

making a second solution by mixing an ammonia ethanol solution with deionized water and ethanol;

mixing the first and second solutions and stirring the mixture of the first and second solutions at a predetermined temperature for a predetermined amount of time;

separating spherical balls from the stirred mixture using a centrifugal separation process; and

forming the spherical balls by distributing the separated spherical balls in an ethanol solution.

7. The method according to claim 1, wherein the buffer layer is formed of a material selected from the group consisting of GaN, AlN, AlGaN, and combinations thereof with a thickness in the range of from about 10 to about 200 nm, to minimize a density of crystal defects of the compound semiconductor thin film by reducing a crystalline difference between the substrate and the compound semiconductor thin film.

8. The method according to claim 1, wherein the growing of the buffer layer comprises:

maintaining a reactor at constant pressure and temperature;

injecting reactive precursors at predetermined flow rates through separate lines into the reactor; and

growing a buffer layer to a desired thickness by causing a chemical reaction between the reactive precursors in the reactor.

9. The method according to claim 8, wherein the buffer layer is grown while the reactor is being maintained at a temperature in a range of from about 400 to about 1200°

C.

10. The method according to claim 8, wherein the reactive precursors include a first reactive precursor, which is selected from the group consisting of TMAl, TMGa, TEGa, and GaCl₃, and a second reactive precursor, which is selected from the group consisting of NH₃, N₂, and tertiarybutylamine(N(C₄H₉)H₂), and the buffer layer is formed of one selected from the group consisting of GaN, AlN, AlGaN, and combinations thereof.

11. The method according to claim 1, wherein the selectively growing of the compound semiconductor thin film between the spherical balls comprises:

maintaining a reactor at constant pressure and temperature;

injecting reactive precursors at predetermined flow rates through separate lines into a reactor; and

growing a compound semiconductor thin film by causing a chemical reaction between the reactive precursors in the reactor.

12. The method according to claim 11, wherein the compound semiconductor thin film is grown while the reactor that is maintained at a temperature in a range of from about 900 to about 1150°

C.

13. The method according to claim 11, wherein the reactive precursors include a first reactive precursor, which is selected from the group consisting of TMAl, TMGa, TEGa, and GaCl₃, and a second reactive precursor, which is selected from the group consisting of NH₃, N₂, and tertiarybutylamine(N(C₄H₉)H₂), and the compound semiconductor thin film is formed of a material selected from the group consisting of GaN, AlN, AlGaN, and combinations thereof.

14. The method according to claim 1, wherein the compound semiconductor thin film further contains at least one material selected from the group consisting of Si, Ge, Mg, Zn, O, Se, Mn, Ti, Ni, and Fe.

15. The method according to claim 1, wherein the substrate is formed of a material selected from the group consisting of Al₂O₃, GaAs, spinel, InP, SiC, and Si.

3. A method of manufacturing a compound semiconductor device, compnsing:

growing a buffer layer on a substrate;

selectively growing a first compound semiconductor thin film on the buffer layer;

growing the clusters or islands for the first compound semiconductor thin film in a lateral direction such that combine into the first compound semiconductor thin film;

forming a plurality of spherical balls;

coating the spherical balls onto the first compound semiconductor thin film;

selectively growing a second compound semiconductor thin film on the first compound semiconductor thin film and between the spherical balls;

growing for the second compound semiconductor thin film in a lateral direction and on the spherical balls; and

continuously growing the second compound semiconductor thin film to a desired thickness.