Method of Manufacturing Compound Semiconductor Devices
First Claim
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1. A method of manufacturing a compound semiconductor device, comprising:
- forming a plurality of spherical balls;
coating the spherical balls onto a substrate;
growing a buffer layer on the substrate on which the spherical balls are coated;
selectively growing a compound semiconductor thin film between the spherical balls;
growing the compound semiconductor thin film in a lateral direction so that it grows on the spherical balls; and
continuously growing the compound semiconductor thin film to a desired thickness.
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Abstract
A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor thin film on the substrate on which the spherical balls are coated. The entire process can be simplified and a high-quality compound semiconductor thin film can be grown in a short amount of time in comparison to an epitaxial lateral overgrowth (ELO) method.
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Citations
15 Claims
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1. A method of manufacturing a compound semiconductor device, comprising:
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forming a plurality of spherical balls; coating the spherical balls onto a substrate; growing a buffer layer on the substrate on which the spherical balls are coated; selectively growing a compound semiconductor thin film between the spherical balls; growing the compound semiconductor thin film in a lateral direction so that it grows on the spherical balls; and continuously growing the compound semiconductor thin film to a desired thickness. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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3. A method of manufacturing a compound semiconductor device, compnsing:
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growing a buffer layer on a substrate; selectively growing a first compound semiconductor thin film on the buffer layer; growing the clusters or islands for the first compound semiconductor thin film in a lateral direction such that combine into the first compound semiconductor thin film; forming a plurality of spherical balls; coating the spherical balls onto the first compound semiconductor thin film; selectively growing a second compound semiconductor thin film on the first compound semiconductor thin film and between the spherical balls; growing for the second compound semiconductor thin film in a lateral direction and on the spherical balls; and continuously growing the second compound semiconductor thin film to a desired thickness.
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Specification