OXIDE ETCHING METHOD

• US 20090149030A1
• Filed: 08/01/2006
• Published: 06/11/2009
• Est. Priority Date: 08/01/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Chang, Chienliu
• Granted Patent: US 8,168,544 B2
• Time in Patent Office: Days
• US Class Current: 438/752
• CPC Class Codes: C09K 13/04 containing an inorganic acid
• CPC Class Codes: C09K 13/06 with organic material
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 31/022475 composed of indium tin oxide [ITO]
• CPC Class Codes: H01L 31/022483 composed of zinc oxide [ZnO]
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

There is provided an etching method of an amorphous oxide layer containing In and at least one of Ga and Zn, which includes etching the amorphous oxide layer using an etchant containing any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.

Claims

1. An etching method of an amorphous oxide layer comprising In and at least one of Ga and Zn, which comprises etching the amorphous oxide layer using an etchant comprising any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.

2. An etching method of an amorphous oxide layer comprising In and at least one of Ga and Zn in a structure comprising an ITO layer and the amorphous oxide layer, the method comprising selectively etching the amorphous oxide layer using an etchant comprising any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.

3. An etching method of an amorphous oxide layer comprising In and Zn, or In, Ga, and Zn in a structure comprising an oxide layer comprising In and Ga and the amorphous oxide layer, the method comprising selectively etching the amorphous oxide layer using an etchant comprising any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.

4. An etching method of an amorphous oxide layer comprising In and Zn in a structure comprising an oxide layer comprising In, Ga, and Zn and the amorphous oxide layer, the method comprising selectively etching the amorphous oxide layer using an etchant comprising any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.