PROCESS FOR PRODUCING ORIENTED INORGANIC CRYSTALLINE FILM, AND SEMICONDUCTOR DEVICE USING THE ORIENTED INORGANIC CRYSTALLINE FILM

• US 20090152506A1
• Filed: 12/17/2008
• Published: 06/18/2009
• Est. Priority Date: 12/17/2007
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Tanaka, Atsushi, Hirai, Hiroyuki, Kohda, Katsuhiro, Sunagawa, Hiroshi, UMEDA, Kenichi, Higashi, Kohei
• Granted Patent: US 8,202,365 B2
• Time in Patent Office: Days
• US Class Current: 252/500
• CPC Class Codes: C30B 1/02 by thermal treatment, e.g. strain annealing C30B1/12 takes precedence
• CPC Class Codes: C30B 29/22 Complex oxides
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

Claims

1. A process for producing an oriented in organic crystalline film, comprising the steps of:

(A) forming on a substrate a non-monocrystalline film containing inorganic crystalline particles by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material; and

(B) crystallizing said non-monocrystalline film by heating the non-monocrystalline film to a temperature equal to or higher than a crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

2. A process according to claim 1, wherein said part of the inorganic crystalline particles are dispersed in said non-monocrystalline film in said step (A).

3. A process according to claim 1, wherein said oriented inorganic crystalline film is composed of oxide and inevitable impurities.

4. A process according to claim 3, wherein said oxide is a composite oxide expressed by a compositional formula,

N_xM_yR_zO_{(x+3y/2+3z/2−}

d),

where R is In, M is at least one of In, Fe, Ga, and Al, N is at least one of Zn and Mg, each of x, y, and z is a real number greater than zero, d indicates an amount of oxygen deficiency, and x, y, z, and d satisfy the relationship,

0≦

d≦

(x+3y/2+3z/2)/10.

5. A process according to claim 1, wherein said oriented inorganic crystalline film is (00n) orientated, and n is a positive integer.

6. A process according to claim 1, wherein said inorganic crystalline particles in said part have an average diameter equal to or greater than 2 nm and smaller than a thickness of said non-monocrystalline film.

7. A process according to claim 1, wherein said inorganic crystalline particles are produced by a sol-gel process using a raw-material solution which contains an organic precursor material and an organic solvent, and the organic precursor material contains all constituent elements of said oriented inorganic crystalline film.

8. A process according to claim 1, wherein said substrate is an amorphous substrate.

9. A process according to claim 8, wherein said substrate is a resin substrate.

10. A process according to claim 8, wherein said substrate is a glass substrate.

11. A process according to claim 1, wherein said non-monocrystalline film is crystallized in said step (B) by heating the non-monocrystalline film with thermic rays.

12. A process according to claim 11, wherein said thermic rays are pulsed laser rays.

13. An oriented inorganic crystalline film produced by said process according to claim 1.

14. An oriented inorganic crystalline film according to claim 13, being a semiconductor film.

15. A semiconductor device comprising said oriented inorganic crystalline film according to claim 14.