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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20090152550A1
  • Filed: 12/15/2008
  • Published: 06/18/2009
  • Est. Priority Date: 12/18/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a gate electrode over the substrate;

    a gate insulating film including an yttria-stabilized zirconia film over the gate electrode; and

    a semiconductor film over the gate insulating film,wherein the semiconductor film is in contact with the yttria-stabilized zirconia film.

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