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III-Nitride Semiconductor Light Emitting Device

  • US 20090152578A1
  • Filed: 08/21/2008
  • Published: 06/18/2009
  • Est. Priority Date: 12/17/2007
  • Status: Active Grant
First Claim
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1. A III-nitride semiconductor light emitting device, comprising:

  • an active layer for generating light by recombination of electrons and holes;

    an n-type nitride semiconductor layer positioned on one side of the active layer; and

    a p-type nitride semiconductor layer positioned on the other side of the active layer to be opposite to the n-type nitride semiconductor layer, and including a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with a rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.

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