LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF

• US 20090152583A1
• Filed: 11/12/2008
• Published: 06/18/2009
• Est. Priority Date: 12/14/2007
• Status: Active Grant

• Current Assignee: Delta Electronics Incorporated
• Original Assignee: Delta Electronics Incorporated
• Inventors: Chen, Shih-Peng, Chen, Chao-Min, Shiue, Ching-Chuan, Chen, Huang-Kun
• Granted Patent: US 7,816,703 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.

Claims

1. A light-emitting diode device comprising:

an epitaxial layer;

a current blocking layer disposed at one side of the epitaxial layer and in contact with a portion of the epitaxial layer; and

a current spreading layer disposed at the side of the epitaxial layer and in contact with the current blocking layer.

2. The light-emitting diode device according to claim 1, wherein:

the epitaxial layer comprising a first semiconductor layer, a light-emitting layer and a second semiconductor layer disposed in sequence; and

the second semiconductor layer comprises a micro-nano structure, and a portion of the micro-nano structure is in contact with the current spreading layer.

3. The light-emitting diode device according to claim 2, wherein the micro-nano structure comprises at least one nano-ball, nano-column, nano-hole, nano-point, nano-line, a nano-concave-convex structure, periodic hole or non-periodic hole.

4. The light-emitting diode device according to claim 1, wherein the current blocking layer comprises nitride, oxide, carbide, a dielectric material or an insulating material with high thermal-conductive coefficient.

5. The light-emitting diode device according to claim 1, wherein the current spreading layer comprises indium tin oxide, nickel/aluminum alloy, nickel oxide, aluminum-doped zinc oxide, zinc gallium oxide, antimony tin oxide or a transparent conductive material.

6. The light-emitting diode device according claim 1 further comprising a substrate, wherein the epitaxial layer, the current blocking layer and the current spreading layer are disposed on the substrate.

7. The light-emitting diode device according to claim 6, further comprising an adhesive layer disposed at one side of the substrate, wherein the adhesive layer is capable of adhering at low temperature, or comprises a pure metal, an alloy, an electroconductive material, a non-electroconductive material, solder, an organic material or an adhesive agent.

8. The light-emitting diode device according to claim 1, further comprising a reflective layer disposed between the substrate and the current spreading layer or disposed at one side of the current spreading layer, wherein the reflective layer comprises platinum, gold, silver, palladium, nickel, chromium, titanium, chromium/aluminum alloy, nickel/aluminum alloy, titanium/aluminum alloy, titanium/silver alloy, chromium/platinum/aluminum alloy or a combination thereof.

9. The light-emitting diode device according to claim 8, further comprising an insulating thermoconductive layer disposed between the substrate and the reflective layer, wherein the insulating thermoconductive layer comprises nitride, oxide, carbide or a dielectric material.

10. The light-emitting diode device according to claim 1, further comprising a transparent conductive layer disposed at the other side of the epitaxial layer, wherein the transparent conductive layer comprises indium tin oxide, aluminum-doped zinc oxide, nickel/aluminum alloy, zinc oxide or zinc gallium oxide.

11. The light-emitting diode device according to claim 10, further comprising a protective layer in contact with the transparent conductive layer, a portion of the epitaxial layer or a portion of the current spreading layer, wherein the protective layer comprises micro-nano particles, nitride, oxide, carbide, a dielectric material or an insulating material with high thermoconductive coefficient.

12. The light-emitting diode device according to claim 11, further comprising:

a first electrode electrically connected to the transparent conductive layer; and

a second electrode electrically connected to the substrate or an exposed portion of the current spreading layer.

13. The light-emitting diode device according to claim 1, wherein the current blocking layer comprises a first micro-nano structure, and the second semiconductor layer comprises a second micro-nano structure corresponding to the first micro-nano structure.

14. The light-emitting diode device according to claim 13, wherein the first or second micro-nano structure comprises at least one nano-ball, nano-column, nano-hole, nano-point, nano-line, a nano-concave-convex structure, periodic hole or non-periodic hole.

15. The light-emitting diode device according to claim 1, wherein the current spreading layer is in contact with a portion of the current blocking layer and a portion of the second semiconductor layer.

16. The light-emitting diode device according to claim 15, further comprising:

a first electrode electrically connected to an exposed portion of the epitaxial layer; and

a second electrode electrically connected to the reflective layer.

17. A manufacturing method of a light-emitting diode device, comprising steps of:

forming an epitaxial layer on a first substrate;

forming a current blocking layer on the epitaxial layer; and

forming a current spreading layer on the current blocking layer or a portion of the epitaxial layer.

18. The method according to claim 17, wherein the step of forming the epitaxial layer comprises:

forming a first semiconductor layer on the first substrate;

forming a light-emitting layer on the first semiconductor layer; and

forming a second semiconductor layer on the light-emitting layer.

19. The method according to claim 18, further comprising a step of forming a first micro-nano structure on the current blocking layer by thin-film process, photolithograph process, etching process, electron beam writer processing, anodic aluminum oxidizing, or using micro-nano particles.

20. The method according to claim 19, further comprising a step of forming a second micro-nano structure on the second semiconductor layer corresponding to the first micro-nano structure, wherein the first micro-nano structure or the second micro-nano structure comprises at least one nano-ball, nano-column, nano-hole, nano-point, nano-line, a nano-concave-convex structure, periodic hole or non-periodic hole.

21. The method according to claim 17, wherein the current blocking layer is formed by stacking, sintering, anodic aluminum oxidizing, nano-imprinting, hot pressing, transfer printing, etching or electron beam writer processing.

22. The method according to claim 17 further comprising a step of:

forming a reflective layer on the current spreading layer.

23. The method according to claim 22, further comprising steps of:

forming an adhesive layer on a second substrate; and

combining the second substrate with the reflective layer by the adhesive layer.

24. The method according to claim 23, further comprising steps of:

turning over the light-emitting diode device; and

removing the first substrate.

25. The method according to claim 24, further comprising:

forming a transparent conductive layer on the first semiconductor layer.

26. The method according to claim 25, further comprising steps of:

forming a first electrode electrically connecting to the transparent conductive layer; and

forming a second electrode electrically connecting to the second substrate or the current spreading layer.

27. The method according to claim 26, further comprising a step of:

forming a protective layer on the transparent conductive layer or the current spreading layer.

28. The method according to claim 27, further comprising a step of:

forming an insulating thermoconductive layer between the reflective layer and the second substrate.

29. The method according to claim 28, further comprising a step of:

removing a portion of the first semiconductor layer, a portion of the light-emitting layer, a portion of the second semiconductor layer and a portion of the current spreading layer so as to expose a portion of the current spreading layer.

30. A manufacturing method of a light-emitting diode device, comprising steps of:

forming a first semiconductor layer on an epitaxial substrate;

forming a light-emitting layer on the first semiconductor layer;

forming a second semiconductor layer on the light-emitting layer, wherein the second semiconductor layer has a first micro-nano structure;

removing a portion of the second semiconductor layer and a portion of the light-emitting layer to expose a portion of the first semiconductor layer;

forming a current blocking layer to cover a portion of the second semiconductor layer, a portion of the light-emitting layer and a portion of the first semiconductor layer; and

forming a current spreading layer on a portion of the second semiconductor layer and a portion of the current blocking layer.

31. The method according to claim 30, further comprising steps of:

forming a reflective layer on the current spreading layer; and

forming a first electrode on the exposed portion of the first semiconductor layer, and a second electrode on the reflective layer.